Abstract
We use transmission electron microscopy (TEM) for in situ studies of electron-beam-induced crystallization behavior in thin films of amorphous transition metal silicon carbides based on Zr (group 4 element) and Nb (group 5). Higher silicon content stabilized the amorphous structure while no effects of carbon were detected. Films with Nb start to crystallize at lower electron doses than the Zr-containing ones. During the crystallization, equiaxed MeC grains are formed in all samples with larger grains for ZrC (∼5 nm) compared to NbC (∼2 nm). The phenomenon of self-terminating crystallization at a dimension of 2–5 nm is explained by segregation of Si that is expelled from growing metal carbide grains into the surrounding amorphous phase matrix, which limits diffusion of the metal and carbon.
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ACKNOWLEDGMENTS
Work was performed within the VINNEX Center FunMat supported by The Swedish Agency for Innovation Systems (VINNOVA). The Knut and Alice Wallenberg Foundation supported the electron microscopy laboratory at Linköping operated by the Thin Film Physics Division. O.T., P.E., and U.J. also acknowledge support from the Swedish Foundation for Strategic Research (SSF) through the Synergy Grant FUNCASE.
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Tengstrand, O., Nedfors, N., Andersson, M. et al. Model for electron-beam-induced crystallization of amorphous Me–Si–C (Me = Nb or Zr) thin films. Journal of Materials Research 29, 2854–2862 (2014). https://doi.org/10.1557/jmr.2014.345
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DOI: https://doi.org/10.1557/jmr.2014.345