Skip to main content
SpringerLink
Log in

Effects of different sulfurization conditions on the characterization of CuIn(SxSe1−x)2 thin films

  • Article
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

In this article, single-phase CuIn(SxSe1-x)2 thin films with different x have been prepared using a new two-step method consisting of partly selenizing Cu–In precursors in Se ambient, and then exposing the partly selenized films to H2S/Ar under different conditions. The x-ray diffraction indicated that the CuIn(SxSe1-x)2 films exhibited the homogeneous chalcopyrite structure. With the increase of the sulfurization temperature from 425 to 525 °C, x increases from 0 to 1, Eg increases from 0.95 to 1.42 eV, the Raman shift of the A1[Se–Se] mode increases from 173 to 197 cm−1, and the resistivity increases from 101 to 103 Ω.cm.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

FIG. 1
FIG. 2
FIG. 3
TABLE I.
FIG. 4
TABLE II.
FIG. 5
FIG. 6

Similar content being viewed by others

References

  1. Y. Nagoya, K. Kushiya, M. Tachiyuki, and O. Yamase: Role of incorporated sulfur into the surface of Cu(InGa)Se2 thin film absorber. Sol. Energy Mater. Sol. Cells 67, 247 (2001).

    Article  CAS  Google Scholar 

  2. V. Alberts: Bandgap engineering in polycrystalline in Cu(In,Ga)(Se,S)2 chalcopyrite thin films. Mater. Sci. Eng., B 107, 139 (2004).

    Article  Google Scholar 

  3. G.J. Wang, G. Cheng, B.B. Hu, X.L. Wang, S.M. Wan, S.X. Wu, and Z.L. Du: Preparation of CuIn(SxSe1-x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2. J. Mater. Res. 25, 2426 (2010).

    Article  CAS  Google Scholar 

  4. S. Nishiwaki, G. Hanket, and W. Shafarman: Control of composition in co-evaporated Cu(InGa)(SeS)2, in 33rd IEEE Photovoltaic Specialists Conference. 1 (3), 1538 (2008).

    Google Scholar 

  5. E.P. Zaretskaya, V.F. Gremenok, V.B. Zalesski, K. Bente, S. Schorr, and S. Zukotynski: Properties of Cu(In,Ga)(S,Se)2 thin films prepared by selenization/sulfurization of metallic alloys. Thin Solid Films 515, 5848 (2007).

    Article  CAS  Google Scholar 

  6. C.J. Sheppard, V. Alberts, and J.R. Botha: Structural and optical characterization of single-phase CuIn(Se,S)2 thin films deposited using a two-step process. Phys. Status Solidi C 5, 641 (2008).

    Article  CAS  Google Scholar 

  7. V. Izquierdo-Roca, X. Fontane, L. Calvo-Barrio, A. Perez-Rodriguez, J.R. Morante, J. Alvarez-Garcia, F. Duault, L. Parissi, and V. Bermudez: Analysis of sulphurisation processes of electrodeposited S-rich CuIn(S,Se)2 layers for photovoltaic applications. Thin Solid Films 517, 2264 (2009).

    Article  CAS  Google Scholar 

  8. S. Shirakata, T. Terasako, and T. Kariya: Properties of CuIn(SxSe1-x)2 polycrystalline thin films prepared by chemical spray pyrolysis. J. Phys. Chem. Solids 66, 1970 (2005).

    Article  CAS  Google Scholar 

  9. S. Chavhan and R. Sharma: Growth, structural and optical properties of non-stoichiometric CuIn(S1-xSex)2 thin films deposited by solution growth technique for photovoltaic application. J. Phys. Chem. Solids 67, 767 (2006).

    Article  CAS  Google Scholar 

  10. V. Alberts: Band gap optimization in Cu(In1-xGax)(Se1-ySy)2 by controlled Ga and S incorporation during reaction of Cu-(In,Ga) intermetallics in H2Se and H2S. Thin Solid Films 517, 2115 (2009).

    Article  CAS  Google Scholar 

  11. O. Volobujeva, M. Altosaar, J. Raudoja, E. Mellikov, M. Grossberg, L. Kaupmees, and P. Barvinschi: SEM analysis and selenization of Cu-In alloy films produced by co-sputtering of metals. Sol. Energy Mater. Sol. Cells 93, 11 (2009).

    Article  CAS  Google Scholar 

  12. J. Bekker: Band-gap engineering in CuIn(Se,S)2 absorbers for solar cells. Sol. Energy Mater. Sol. Cells 93, 539 (2009).

    Article  CAS  Google Scholar 

  13. V. Izquierdo-Roca, A. Perez-Rodriguez, A. Romano-Rodriguez, J.R. Morante, J. Alvarez-Garcia, L. Calvo-Barrio, V. Bermudez, P.P. Grand, O. Ramdani, L. Parissi, and O. Kerrec: Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis. J. Appl. Phys. 101, 103517 (2007).

    Article  Google Scholar 

  14. V. Izquierdo-Roca, X. Fontane, J. Alvarez-Garcia, L. Calvo-Barrio, A. Perez-Rodriguez, J.R. Morante, J.S. Jaime-Ferrer, E. Saucedo, P.P. Grand, and V. Bermudez: Electrodeposition based synthesis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Raman scattering analysis of electrodeposited CuInSe2 precursors. Thin Solid Films 517, 2163 (2009).

    Article  CAS  Google Scholar 

  15. I.H. Choi and P.Y. Yu: Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor. J. Appl. Phys. 93, 4673 (2003).

    Article  CAS  Google Scholar 

  16. K. Tang, U. Kunecke, F. Oehlschlager, A. Holzing, R. Schurr, R. Hock, and P.W. Wellmann: Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials. Sol. Energy Mater. Sol. Cells 94, 1875 (2010).

    Article  CAS  Google Scholar 

  17. A.V. Mudryi, I.A. Victorov, V.F. Gremenok, A.I. Patuk, I.A. Shakin, and M. Yakushev: Optical spectroscopy of chalcopyrite compounds CuInS2, CuInSe2 and their solid solutions. Thin Solid Films 431, 197 (2003).

    Article  Google Scholar 

Download references

ACKNOWLEDGMENTS

This work was supported by National Basic Research Program of China (973 Program)-2012CB922001 and the Fundamental Research Funds for the Central Universities (WK2060140005).

Author information

Authors and Affiliations

  1. Key Laboratory of Materials for Energy Conversion, Chinese Academy of Science, Hefei, Anhui, 230026, People’s Republic of China

    Fei Yan, Weifeng Liu, Guoshun Jiang, Xinyi Li, Haibin Xie & Changfei Zhu

  2. Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, People’s Republic of China

    Fei Yan, Weifeng Liu, Guoshun Jiang, Xinyi Li, Haibin Xie & Changfei Zhu

Authors
  1. Fei Yan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Weifeng Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Guoshun Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Xinyi Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Haibin Xie
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Changfei Zhu
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Weifeng Liu.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yan, F., Liu, W., Jiang, G. et al. Effects of different sulfurization conditions on the characterization of CuIn(SxSe1−x)2 thin films. Journal of Materials Research 27, 1112–1116 (2012). https://doi.org/10.1557/jmr.2012.64

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/jmr.2012.64

Search

Navigation