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Influence of selenium vapor postannealing on the electrical transport properties of PbSe–WSe2 nanolaminates

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Abstract

The influence of annealing time and annealing temperature under controlled partial pressure of selenium on the in-plane electrical transport properties of specimens of [(PbSe)0.99]1[WSe2]1 turbostratic nanolaminates was studied. The annealing treatments were found to be very effective in reducing carrier concentrations and improving carrier mobility in the annealed films, which is attributed to the reduction of compositional and structural defects. As a result, room temperature Hall mobilities greater than 60 cm2 V−1·s−1 are observed in spite of the small in-plane domain sizes (on the order of 10 nm) that are related to the turbostratic disorder. The technique appears promising for decreasing the concentration of kinetically trapped defects in these and related self-assembled nanostructures, a key challenge to evaluating the expected potential for controlling electrical and thermal transport properties via designed nanostructure in these and related materials.

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ACKNOWLEDGMENTS

The authors thank Ms. Jenia Karapetrova for technical assistance during collection of the synchrotron XRD data and acknowledge Dr. Harald Böttner for useful discussions concerning the vapor annealing apparatus. This work was supported through the Office of Naval Research (N0014-07-1-0358), the Oregon Nanoscience and Microtechnologies Institute, and the Army Research Laboratory. Coauthors C. Mortensen and C. Heideman were supported by the National Science Foundation through the Integrative Graduate Education and Research Traineeship (IGERT) (Grant No. DGE-0549503). The use of the APS was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

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Authors and Affiliations

  1. Department of Chemistry, University of Oregon, Eugene, Oregon, 97403-1205, USA

    Qiyin Lin, Sara Tepfer, Colby Heideman, Clay Mortensen, Ngoc Nguyen, Matt Beekman & David C. Johnson

  2. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois, 60439, USA

    Paul Zschack

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  1. Qiyin Lin
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  2. Sara Tepfer
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  3. Colby Heideman
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  7. Matt Beekman
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  8. David C. Johnson
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Correspondence to David C. Johnson.

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Lin, Q., Tepfer, S., Heideman, C. et al. Influence of selenium vapor postannealing on the electrical transport properties of PbSe–WSe2 nanolaminates. Journal of Materials Research 26, 1866–1871 (2011). https://doi.org/10.1557/jmr.2011.77

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