Abstract
This study investigates thermally induced structural damages to amorphous plasma-enhanced chemical vapor deposition (PECVD) SiNx thin films at elevated temperatures, including chemical structure, microstructure, and physical integrity. The films were synthesized by means of PECVD method. Heating to elevated temperatures in air was found to cause multiple forms of chemical, structural, and physical damages. Chemically the films were found to oxidize and lose their nitrogen and hydrogen contents. Structurally the amorphous SiNx matrix was found to convert partially into SiO2 as a result of oxidation and to crystallize into Si3N4 crystallites. The physical damages include pinholes, circular “penny” cracks, random “dry mud” cracks, and spalling. The types of the damages were observed in different temperature regimes. The formation of the penny cracks is attributed to excessive compressive stresses created in the film by oxidation, which is associated with a large volume expansion. The formation of the random cracks is attributed to tensile stresses caused by crystallization, which is associated with a large volume contraction. Such damages limit the suitable application conditions for devices made of these films.
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A. Ouacha, M. Willander, B. Hammarlund, and R.A. Logan: Effect of surface passivation with SiN on the electrical properties of InP/InGaAs heterojunction bipolar transistors. J. Appl. Phys. 74, 5602 (1993).
A. Brunet-Bruneau, G. Vuye, J.M. Frigerio, F. Abeles, J. Rivory, M. Berger, and P. Chaton: Infrared ellipsometry investigation of SiOxNy thin films on silicon. Appl. Opt. 35, 4998 (1996).
G. Santana, J. Fandino, A. Ortiz, and J.C. Alonso: Low temperature–low hydrogen content silicon nitrides thin films deposited by PECVD using dichlorosilane and ammonia mixtures. J. Non-Cryst. Solids 351, 922 (2005).
J. Antoszewski, M. Martyniuk, C.A. Musca, J.M. Dell, and L. Faraone: Towards MEMS based infrared tunable micro-spectrometers. SPIE Proc. 16–, 148 (2002).
K.J. Winchester and J.M. Dell: Tunable Fabry–P’erot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer. J. Micromech. Microeng. 11, 589 (2001).
M.T.K Soh, N. Savvides, C.A. Musca, M.P. Martyniuk, and L. Faraone: Local bonding environment of nitrogen-rich silicon nitride thin films. J. Appl. Phys. 97, 093714 (2005).
S. Bae, D.G. Farber, and S.J. Fonash: Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma. Solid State Electron. 44, 1355 (2000).
R. Karcher, L. Ley, and R.L. Johnson: Electronic structure of hydrogenated and unhydrogenated amorphous SiNx: A photoemission study. Phys. Rev. B 30, 1896 (1984).
W.R. Knolle and J.W. Osenbach: The structure of plasma deposited silicon nitride films determined by infrared spectroscopy. J. Appl. Phys. 58, 1248 (1985).
F. Alvarez and A.A. Valladares: The atomic and electronic structure of amorphous silicon nitride. Rev. Mex. Fis. 48, 528 (2002).
J. Thurn, R.F. Cook, M. Kamarajugadda, S.P. Bozeman, and L.C. Stearns: Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films. J. Appl. Phys. 95, 967 (2004).
N. Jehanathan, Y. Liu, B. Walmsley, J. Dell, and M. Saunders: Effect of oxidation on the chemical bonding structure of PECVD SiNx thin films. J. Appl. Phys. 100, 123516 (2006).
M.J. Cordill, D.F. Bahr, N.R. Moody, and W.W. Gerberich: Adhesion measurements using telephone cord buckles. Mater. Sci. Eng., A 443, 150 (2007).
C. Coupeau, M. George, I. Regache, J. Colin, and J. Grilhe: Buckling pattern with rings: Evidence of plastic damage in thin films. Philos. Mag. Lett. 83, 453 (2003).
M.P. Hughey and R.F. Cook: Massive stress changes in plasma-enhanced chemical vapor deposited silicon nitride films on thermal cycling. Thin Solid Films 460, 7 (2004).
N. Jehanathan, B. Walmsley, Y. Liu, and J. Dell: Oxidation of PECVD SiNx thin films. J. Alloy. Compd. 437, 332 (2007).
A. Aydinli and F. Ay: Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides. Opt. Mater. 26, 33 (2004).
T. Kanata, H. Takakura, and Y. Hamakawa: Preparation of composition-controlled silicon oxynitride films by sputtering; deposition mechanism, and optical and surface properties. Appl. Phys. A 49, 305 (1989).
S.K. Ray, S. Das, C.K. Maiti, S.K. Lahiri, and N.B. Chakraborti: Effect of reactive ion bombardment on the properties of silicon nitride and oxynitride films deposited by dual ion beam sputtering. J. Appl. Phys. 75, 8145 (1994).
N. Jehanathan, M. Saunders, Y. Liu, and J. Dell: Crystallization in silicon nitride thin films synthesised by plasma enhanced chemical vapour deposition. Scr. Mater. 57, 739 (2007).
B. Audoly: Stability of straight delamination blisters. Phys. Rev. Lett. 83, 4124 (1999).
B.A. Walmsley, Y. Liu, X.Z. Hu, M.B. Bush, K.J. Winchester, M. Martyniuk, J.M. Dell, and L. Faraone: Effects of deposition temperature on the mechanical and physical properties of PECVD silicon nitride thin films. J. Appl. Phys. 98, 044904 (2005).
Acknowledgments
This work is financially supported by ARC Grant DP0559744. The authors acknowledge the experimental support of the Centre for Microscopy, Characterization and Microanalysis of the University of Western Australia. The financial support from the ARC Network of Nano-technology is also acknowledged.
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Liu, Y., Jehanathan, N. & Dell, J. Thermally induced damages of PECVD SiNx thin films. Journal of Materials Research 26, 2552–2557 (2011). https://doi.org/10.1557/jmr.2011.236
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DOI: https://doi.org/10.1557/jmr.2011.236