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Doping of semiconductor nanowires

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Abstract

A cornerstone in the successful application of semiconductor nanowire devices is controlled impurity doping. In this review article, we discuss the key results in the field of semiconductor nanowire doping. Considerable development has recently taken place in this field, and half of the references in this review are less than 3 years old. We present a simple model for dopant incorporation during in situ doping of particle-assisted growth of nanowires. The effects of doping on nanowire growth are thoroughly discussed since many investigators have seen much stronger and more complex effects than those observed in thin-film growth. We also give an overview of methods of characterizing doping in nanowires since these in many ways define the boundaries of our current understanding.

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Acknowledgment

This work was performed within the Nanometer Structure Consortium at Lund University and was supported by the Swedish Research Council, the Swedish Foundation for Strategic Research, the Nordic Innovation Centre project Nanordsun, and the EU program AMON-RA (214814). This report is based on a project that was funded by E.ON AG as part of the E.ON International Research Initiative. The authors thank Claes Thelander and Knut Deppert for valuable discussions.

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    Jesper Wallentin & Magnus T. Borgström

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Wallentin, J., Borgström, M.T. Doping of semiconductor nanowires. Journal of Materials Research 26, 2142–2156 (2011). https://doi.org/10.1557/jmr.2011.214

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