Abstract
Punched-out dislocations emitted from an octahedral oxide precipitate in single-crystal silicon were investigated using high-voltage electron microscopy and tomography (HVEM-tomography) to understand the mechanism of softening caused by the oxide precipitates. In the present paper, direct evidence of the transition of a punched-out prismatic dislocation loop to a slip dislocation is presented. The punched-out dislocation grows into a large matrix dislocation loop by absorption of interstitial atoms, which were produced during oxide precipitation.
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Tanaka, M., Liu, G.S., Kishida, T. et al. Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography. Journal of Materials Research 25, 2292–2296 (2010). https://doi.org/10.1557/jmr.2010.0308
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DOI: https://doi.org/10.1557/jmr.2010.0308