Abstract
We present a new process based on the electrolysis of glass, which allows the transfer of a single-crystal silicon film while creating an in situ barrier layer free of mobile ions in the glass. This barrier layer consists only of network-forming elements (i.e., aluminum, silicon, and boron) and is free of modifiers. The barrier layer glass is unusual and cannot be synthesized via any of the known glass-forming processes. The barrier layer is thermally stable and thus allows the fabrication of displays with ultimate performance. The process consists of the hydrogen ion implantation of silicon to create a defect structure followed by bringing the glass and the silicon wafer in contact, and finally applying electrical potential to cause the electrolysis of glass.
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Acknowledgments
Mr. Joseph Mach, Corning Inc., fabricated all the samples for this work. The authors also appreciate the discussions with Dr. Greg Couillard, Corning Inc.
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Gadkaree, K.P., Soni, K., Cheng, SC. et al. Single-crystal silicon films on glass. Journal of Materials Research 22, 2363–2367 (2007). https://doi.org/10.1557/jmr.2007.0330
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DOI: https://doi.org/10.1557/jmr.2007.0330