Skip to main content
SpringerLink
Log in

Comparative study of vertical gradient freeze grown CdTe with variable Sn concentration

  • Article
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

Four CdTe ingots with gradually increased concentration of the Sn impurity have been grown by the vertical gradient freeze method and were characterized with glow discharge mass spectroscopy, photoinduced current transient spectroscopy, resistivity, photoconductivity, and photoluminescence techniques. It was shown that the Sn impurity strongly influences resistivity and photoconductivity of the material. Concentration of Sn must be higher than the total concentration of residual acceptors to reach strong compensation. The middle-gap donor level pins the Fermi-level. Photoconductive high resistivity material can be prepared with Sn concentrations in the melt in the range 1018–1019 cm−3. In total, 6 electron traps and 3 hole traps were identified in the band gap by several complementary techniques.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. O. Limousin: New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications. Nucl. Instrum. Methods A 504, 24 (2003).

    CAS  Google Scholar 

  2. T.E. Schlesinger, J.E. Toney, H. Yoon, E.Y. Lee, B.A. Brunett, L. Franks, R.B. James: Cadmium zinc telluride and its use as a nuclear radiation detector material. Mater. Sci. Eng. R32, 103 (2001).

    CAS  Google Scholar 

  3. P. Rudolph, M. Mühlberg: Basic problems of vertical Bridgman growth of CdTe. Mater. Sci. Eng. B16, 8 (1993).

    CAS  Google Scholar 

  4. F.A. Kröger: The defect structure of CdTe. Rev. Phys. Applique 12, 205 (1977).

    Google Scholar 

  5. K. Mochizuki: Growth of CdTe from Te excess solution and self-compensation of doped donor. J. Cryst. Growth 214/215, 9 (2000).

    CAS  Google Scholar 

  6. D. Nobel: Phase equilibria and semiconducting properties of cadmium telluride. Philips Res. Rep. 14, 361 (1959).

    Google Scholar 

  7. O.A. Matveev, A.I. Terentev: Basic principles of postgrowth annealing of CdTe: Cl ingot to obtain semi-insulating crystals. Semiconductors 34, 1316 (2000).

    Google Scholar 

  8. M. Fiederle, C. Eiche, M. Salk, R. Schwarz, K.W. Benz, W. Stadler, D.M. Hofman, B.K. Meyer: Modified compensation model of CdTe. J. Appl. Phys. 84, 6689 (1998).

    CAS  Google Scholar 

  9. G. Brunthaler, W. Jantsch, U. Kaufmann, J. Schneider: Electron-spin-resonance analysis of the deep donors lead, tin, and germanium in CdTe. Phys. Rev. B 31, 1239 (1985).

    CAS  Google Scholar 

  10. W. Jantsch, G. Hendorfer: Characterization of deep levels in CdTe by photo-EPR and related techniques. J. Cryst. Growth 101, 404 (1990).

    CAS  Google Scholar 

  11. A.V. Savitskii, K.D. Tovstyuk, O.E. Panchuk: Impurity interaction in CdTe dynamic lattice. Sov. Phys. Solid State 27, 1956 (1985).

    Google Scholar 

  12. P.M. Fochuk, L.P. Shcherbak, P.I. Feichuk, O.E. Panchuk: Distribution of Ga in CdTe. Inorg. Mater. 31, 1408 (1995).

    Google Scholar 

  13. M. Illgner, H. Overhof: Electronic structure and hyperfine interactions for deep donors and vacancies in II-VI compound semiconductors. Phys. Rev. B 54, 2505 (1996).

    CAS  Google Scholar 

  14. A.V. Savitskii, O.A. Parfenyuk, M.I. Ilaschukm, P.A. Pavlin: Compensating effect of lead impurity of CdTe. Inorg. Mater. 25, 1567 (1989).

    Google Scholar 

  15. P.N. Gorlei, O.A. Parfenyuk, M.I. Ilaschuk, K.S. Ulyanitskii, V.R. Burachek, S.N. Chupyra: Photosensitive centers in CdTe < Ge >, CdTe < Sn >, and CdTe < Pb >. Inorg. Mater. 39, 1127 (2003).

    CAS  Google Scholar 

  16. V. Savitskii, O.A. Parfenyuk, M.I. Ilashchuk, K.S. Ulyanitskii, A.I. Savchuk, P.M. Gorley: Photoelectric properties of CdTe: Sn semiinsulating crystals. Opt. Mater. 18, 167 (2001).

    Google Scholar 

  17. O. Panchuk, A. Savitskiy, P. Fochuk, Y. Nykonyuk, O. Parfenyuk, L. Shcherbak, M. Lashchuk, L. Latsunyuk, P. Feychuk: IV group dopant compensation effect in CdTe. J. Cryst. Growth 197, 607 (1999).

    CAS  Google Scholar 

  18. M. Fiederle, V. Babentsov, J. Franc, A. Fauler, K.W. Benz, R.B. James, E. Cross: Defect structure of Ge doped CdTe. J. Cryst. Growth 243, 77 (2002).

    CAS  Google Scholar 

  19. R. Stibal, J. Windscheif, W. Jantz: Contactless evaluation of semiinsulating GaAs wafer resistivity using time-dependent charge measurements. Semicond. Sci. Technol. 6, 995 (1991).

    CAS  Google Scholar 

  20. M. Tapiero, N. Benjelloun, J.P. Zielinger, S. Hamd El: Noguet, Photoinduced current transient spectroscopy in high-resistivity bulk materials–instrumentation and methodology. J. Appl. Phys. 64, 4006 (1988).

    CAS  Google Scholar 

  21. G.H. Grosch, B. Freytag, K.J. Range, U. Rössler: Stability of CdxSn1-xTe in rock-salt structure–a study of zero flux surfaces and bonding. J. Chem. Phys. 101, 6782 (1994).

    Google Scholar 

  22. B. Freytag, RöU. ssler, K. Karch, G.H. Grosch, K.J. Range: Total energy calculation for CdxSn1–xTe. J. Chem. Phys. 99, 6751 (1993).

    CAS  Google Scholar 

  23. G.W. Blackmore, S.J. Courtney, A. Royle, N. Shaw, A.W. Vere: Boron segregation in Czochralski grown CdTe. J. Cryst. Growth 85, 335 (1987).

    CAS  Google Scholar 

  24. E. Oldekop, V. Eyert, F. Niedermeyer, M. Wienecke, W.D. Zeitz: The behavior of B-12 in CdTe studied with beta-NMR technique. Materials Science Application of Ion Beam Techniques Materials Science Forum 248, 267 (1997).

    Google Scholar 

  25. U. Pal, P. Fernandez, J. Piqueras, N.V. Sochinskii, DiéE. guez: Cathodoluminescence characterization of Ge-doped CdTe crystals. J. Appl. Phys. 78, 1992 (1995).

    CAS  Google Scholar 

  26. A. Castaldini, A. Cavallini, B. Fraboni, P. Fernandez, J. Piqueras: Deep energy levels in CdTe and CdZnTe. J. Appl. Phys. 83, 2121 (1998).

    CAS  Google Scholar 

  27. W. Stadler, D.M. Hofmann, H.C. Alt, T. Muschik, B.K. Meyer, E. Weigel, Müller-G. Vogt, M. Salk, E. Rupp, K.W. Benz: Optical investigations of defects in Cd 1-xZn xTe. Phys. Rev. B 51, 10619 (1995).

    CAS  Google Scholar 

  28. Z.o.g.a. Yu, S.G. Hofer, N.C. Giles, T.H. Myers, C.J. Summers: Interpretation of near-band-edge photoreflectance spectra from CdTe. Phys. Rev. B 51, 13 789 (1995).

    CAS  Google Scholar 

  29. M. Hage-Ali, P. Siffert: Status of semi-insulating cadmium telluride for bnuclear radiation detectors. Nucl. Instr. Meth. A 322, 313 (1992).

    Google Scholar 

  30. C. Szeles., Y.Y. Shan, K.G. Lynn, A.R. Moodenbaugh, E.E. Eissler: Trapping properties of cadmium vacancies in Cd1-x ZnxTe. Phys. Rev. B 55, 6945 (1997).

    CAS  Google Scholar 

  31. P. Emanuelsson, P. Omling, B.K. Meyer, M. Wienecke, M. Schenk: Identification of the cadmium vacancy in CdTe by electron-paramagnetic resonance. Phys. Rev. B. 47, 15578 (1993).

    CAS  Google Scholar 

  32. A. Rose Concepts in photoconductivity and allied problems, (Robert E. Krieger Publishing, New York, 1978), p. 43.

    Google Scholar 

  33. R.H. BubePhotoconductivity of solids, (John Wiley & Sons, New York, 1960), p. 325.

    Google Scholar 

  34. X. Mathew: Photo-induced current transient spectroscopic study of the traps in CdTe. Sol. Energy Mater. Sol. Cells 76, 225 (2003).

    CAS  Google Scholar 

  35. C.P. Ye, J.H. Chen: Studies of defects in N-type CdTe by charge transient spectroscopy. J. Appl. Phys. 67, 2475 (1990).

    Google Scholar 

  36. R.E. Kremer, W.B. Leigh: Deep levels in CdTe. J. Cryst. Growth 86, 490 (1988).

    CAS  Google Scholar 

  37. G.F. Neumark: Defects in wide band gap II-VI crystals. Mater. Sci. Eng. R21, 1 (1997).

    Google Scholar 

  38. P. Fougeres, P. Siffert, Hage-M. Ali, J.M. Koebel, R. Regal: CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions, Nucl. Instr. Methods Phys. Res. A 428, 38 (1999).

    CAS  Google Scholar 

  39. T. Takebe, J. Saraie, H. Matsunami: Detailed characterization of deep centers in CdTe-photoionization and thermal ionization properties. J. Appl. Phys. 53, 457 (1982).

    CAS  Google Scholar 

  40. H. Sitter, D. As, J. Humenberger, Lopez-A. Otero: Investigation of deep levels in epitaxially grown CdS and CdTe layers. J. Cryst. Growth 59, 229 (1982).

    CAS  Google Scholar 

  41. L.C. Isett, P.K. Raychaudhuri: Deep levels in CdTe. J. Appl. Phys. 55, 3605 (1984).

    CAS  Google Scholar 

  42. G.M. Khattak, C.G. Scott: Characterization of deep levels in N-type CdTe. J. Phys: Condens. Matter 3, 8619 (1991).

    CAS  Google Scholar 

  43. C. Eiche, W. Joerger, M. Fiederle, D. Ebling, R. Schwarz, K.W. Benz: Investigation of CdTe:Cl grown from the vapor-phase under microgravity conditions with time dependent charge measurements and photoinduced current transient spectroscopy. J. Cryst. Growth 146, 98 (1995).

    CAS  Google Scholar 

  44. A. Balcioglu, R.K. Ahrenkiel, F. Hasoon: Deep-level impurities in CdTe/CdS thin-film solar cells. J. Appl. Phys. 88, 7175 (2000).

    CAS  Google Scholar 

  45. A. Castaldini, A. Cavallini, B. Fraboni, L. Polenta, P. Fernandez, J. Piqueras: Cathodoluminescence and photoinduced current spectroscopy studies of defects in Cd0.8Zn0.2Te. Phys. Rev. B 54, 7622 (1996).

    CAS  Google Scholar 

  46. A. Cavallini, B. Fraboni, W. Dusi, M. Zanarini, P. Siffert: Deep levels and compensation in gamma-irradiated CdZnTe. Appl. Phys. Lett. 77, 3212 (2000).

    CAS  Google Scholar 

  47. A. Cavallini, B. Fraboni, W. Dusi, N. Auricchio, P. Chirco, M. Zanarini, P. Siffert, P. Fougeres: Radiation effects on II-VI compound-based detectors. Nucl. Instrum. Method A476, 770 (2002).

    Google Scholar 

  48. E.A. Bobrova, Y. Klevkov.V., S.A. Medvedev, A.F. Plotnikov: A DLTS study of deep levels in the band gap of textured stoichiometric p-CdTe polycrystals. Semiconductors 36, 1341 (2002).

    CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Faculty of Mathematics and Physics, Institute of Physics, Charles University, Prague, CZ 121 16, Czech Republic

    J. Franc & H. Elhadidy

  2. Institute for Semiconductor Physics, Kiev, 03028, Ukraine

    V. Babentsov

  3. Materialforschungszentrum, Freiburg, D-79104, Germany

    A. Fauler & M. Fiederle

Authors
  1. J. Franc
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. Elhadidy
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. Babentsov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. Fauler
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Fiederle
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to J. Franc.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Franc, J., Elhadidy, H., Babentsov, V. et al. Comparative study of vertical gradient freeze grown CdTe with variable Sn concentration. Journal of Materials Research 21, 1025–1032 (2006). https://doi.org/10.1557/jmr.2006.0117

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/jmr.2006.0117

Search

Navigation