Abstract
The impact of the Al and Ge ratio in the Al-Ge pastes are investigated for fabricating the single-crystalline Si1-xGex thick layers on large area Si substrates by screen-printing metallization process. From X-ray reciprocal space maps, Ge fraction in the fabricated Si1-xGex thick layers are found to increase up to 40% with increasing the Ge ratio in the Al-Ge pastes. On the other hand, the interface of the Si and Si1-xGex layers are getting winding with increasing the Ge ratio in the Al-Ge pastes. The Al-Si-Ge phase diagram indicated that uniform SiGe layer can be fabricated by adjusting the Al-Ge ratio in the pastes within the liquid phase region.
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Nakahara, M., Matsubara, M., Suzuki, S. et al. Fabrication of Si1-xGex layer on Si substrate by Screen-Printing. MRS Advances 4, 749–754 (2019). https://doi.org/10.1557/adv.2019.15
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DOI: https://doi.org/10.1557/adv.2019.15