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Growth of 3C-SiC on Si(100) by LPCVD using a modified process after the clean step

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Abstract

A modified method is applied to grow a void-free 3C-SiC thin film of better crystal quality on the Si(100) substrate in a mixed gas of C3H8, SiH4 and H2 using low pressure chemical vapor deposition. The modified method adds a low temperature and low pressure heat treatment step after the clean step and subsequent a high flow carbon-based precursor gas-on step. The X-ray intensity of the 3C-SiC(200) peak is enhanced intensively using this modified method. The better crystal quality of 3C-SiC is confirmed by both X-ray diffraction and Raman spectra data. The modified method leads to a better crystal quality and surface morphology of the 3C-SiC film grown on Si(100) due to the better carbonized surface morphology. Moreover, the modified method can completely remove the void formation during the whole process. Morphological and structure analysis using scanning electron microscopy and transmission electron microscopy reveal no void defects at the 3C-SiC/Si(100) interface.

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Authors and Affiliations

  1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, 210016, China

    Zhifei Zhao, Yun Li, Zhijun Yin & Zhonghui Li

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  1. Zhifei Zhao
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  2. Yun Li
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  3. Zhijun Yin
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  4. Zhonghui Li
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Correspondence to Zhonghui Li.

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Zhao, Z., Li, Y., Yin, Z. et al. Growth of 3C-SiC on Si(100) by LPCVD using a modified process after the clean step. J Mater Sci: Mater Electron 27, 7095–7099 (2016). https://doi.org/10.1007/s10854-016-4670-7

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  • DOI: https://doi.org/10.1007/s10854-016-4670-7

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