Abstract
An overview is presented of a recently developed surface analysis method that combines (1) desorption of neutral atoms and molecules from a sample, typically by sputtering, (2) efficient uniform ionization close to but above the surface by an intense ultraviolet laser beam, and (3) time-of-flight mass spectrometry. This technique, surface analysis by laser ionization, or SALI, provides extremely efficient and sensitive quantitative analysis of surfaces and materials with high depth resolution. Essentially any type of material can be analyzed as evidenced by the examples presented here: the Au-GaAs system, a phosphor-silicate glass, and a bulk polymer.
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J.J. Thomson, Philos. Mag. 20 (1910) p. 252.
See, e.g., Secondary Ion Mass Spectrometry SIMS V, edited by A. Benninghoven, R.J. Colton, D.S. Simons, and H.W. Werner (Springer-Verlag, Berlin, 1986); and “Fundamentals of Secondary Ion Mass Spectrometry,” by W. Katz and J.G. Newman in this issue of the MRS BULLETIN.
I.D. Kovalev, G.A. Maksimov, A.I. Suchkob, and N.V. Larin, Inf. J. Mass. Spectrom. Ion Phys. 227 (1978) p. 101; R.J. Conzemius and J.M. Capellen, ibid. 34 (1980) p. 197.
R.E. Honig, J. Appl. Phys. 29 (1958) p. 549.
J.R. Woodyard and C.B. Cooper, J. Appl. Phys. 35 (1964) p. 1107.
H. Oechsner and W. Gerhard, Surf. Sci. 44 (1974) p. 480.
N. Winograd, J.P. Baxter, and F.M. Kimock, Chem. Phys. Lett. 88 (1982) p. 581; F.M. Kimock, J.P. Baxter, D.L. Pappas, P.H. Kobrin, and N. Winograd, Anal. Chem. 56 (1984) p. 2782.
J.E. Parks, H.W. Schmitt, G.S. Hurst, and W.M. Fairbank, Jr., Thin Solid Films 108 (1983) p. 69; M.J. Pellin, C.E. Young, W.F. Calaway, and D.M. Gruen, Surf. Sci. 144 (1984) p. 619; D.L. Donohue, W.H. Christie, D.E. Goeringer, and H.S. McKown, Anal. Chem. 57 (1985) p. 1193.
H. Gnaser, J. Fleischhauer, and W.O. Hofer, Appl. Phys. A 37 (1985) p. 211; O. Ganschow, in Reference 2, p. 79.
M.G. Sherman, J.R. Kingsley, D. Land, R.T. Mclver Jr., and J.C. Hemminger, J. Vac. Sci. Technol. A 4 (1986) p. 1507.
C.H. Becker and K.T. Gillen, Anal. Chem. 56 (1984) p. 1671.
C.H. Becker and K.T. Gillen, J. Vac. Sci. Technol. A 3 (1985) p. 1347.
P. Lambropoulos, Adv. At. Mol. Phys. 12 (1976) p. 87; J. Morellec, D. Normand, and G. Petite, ibid. 18 (1982) p. 97.
B. Schueler and R.W. Odom, J. Appl. Phys. 61 (1987) p. 4652.
B.A. Mamyrin, V.I. Karataev, D.V. Shmikk, and V.A. Zagulin, Sov. Phys. JETP 37 (1973) p. 45.
E. Taglauer and W. Heiland, Appl. Phys. 9 (1976) p. 261; T.M. Buck, G.H. Wheatley, and L. Marchut, Phys. Rev. Lett. 51 (1983) p. 43.
C.H. Becker, J. Vac. Sci. Technol. A 5 (1987) p. 1181.
J.B. Pallix, C.H. Becker, and K.T. Gillen, Appl. Surf. Sci. (submitted).
C.H. Becker and K.T. Gillen, Appl. Phys. Lett. 45 (1984) p. 1063.
C.H. Becker, in Materials Characterization, edited by N.W. Cheung and M.-A. Nicolet (Mater. Res. Soc. Symp. Proc. 69, Pittsburgh, PA, 1986) p. 59.
C.M. Stahle, D.J. Thomson, C.R. Helms, C.H. Becker, and A. Simmons, Appl. Phys. Lett. 47 (1985) p. 521.
P. Williams, in Applied Atomic Collision Physics edited by S. Datz (Academic Press, Orlando, FL, 1983) Vol. 4, p. 327.
J. Van Laar and A. Huijser, J. Vac. Sci. Technol. 13 (1976) p. 769; W.E. Spicer, I. Lindau, P.E. Gregory, C.M. Garner, P. Pianetta, and P.W. Chye, ibid. 13 (1976) p. 780.
W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16 (1979) p. 1427; W.E. Spicer, I. Lindau, P.R. Skeath, C.Y. Su, and P.W. Chye, Phys. Rev. Lett. 44 (1980) p. 420.
N. Newman, W.G. Petro, T. Kendelewicz, S.H. Pan, S.J. Eglash, and W.E. Spicer, J. Appl. Phys. 57 (1985) p. 1247.
N. Newman, W.E. Spicer, and E.R. Weber, J. Vac. Sci. Technol. B 5 p. 1020, and literature cited.
N. Newman, K.K. Chin, W.G. Petro, T. Kendelewicz, M.D. Williams, C.E. McCants, and W.E. Spicer, J. Vac. Sci. Technol. A 3 (1985) p. 996, and literature cited.
Z. Liliental-Weber, R. Gronsky, J. Washburn, N. Newman, W.E. Spicer, and E.R. Weber, J. Vac. Sci. Technol. B 4 (1986) p. 912.
Z. Liliental-Weber, E.R. Weber, N. Newman, W.E. Spicer, R. Gronsky, and J. Washburn in Defects in Semiconductors, edited by H.J. von Barbeleben (Materials Science Press, Switzerland, 1986) Vol. 10–12, p. 1223; D. Coulman, N. Newman, G.A. Reid, Z. Liliental-Weber, E.R. Weber, and W.E. Spicer, J. Vac. Sci. Technol. B 5 (in press).
E.R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, and T. Wosinski, J. Appl. Phys. 53 (1982) p. 6140; E.R. Weber and J. Schneider, Physica B 116 (1983) p. 398.
I.V. Bletsos, D.M. Hercules, A. Benninghoven, and D. Greifendorf, in Ref. 2, p. 538; I.J. Amster, J. A. Loo, J.J.P. Furlong, and F.W. McLafferty, Anal. Chem. 59 (1987) p. 313; C.L. Wilkins, D.A. Weil, C.L.C. Yang, and C.F. Ijames, ibid. 57 (1985) p. 520; R.J. Cotter, J.P. Honovich, J.K. Olthoff, and R.P. Lattimer, Macromol. 19 (1986) p. 2996.
Polymer Handbook, 2nd ed., edited by J. Brandrup and E.H. Immergut (Wiley Inter-science, New York, 1975) Section II, p. 473.
A.H. Kung, J.F. Young, and S.E. Harris, Appl. Phys. Lett. 22 (1973) p. 301; (errata) 28 (1976) p. 239; L.J. Zych and J.F. Young, IEEE J. Quantum Electron. QE-14 (1978) p. 147; A.H. Kung, Opt. Lett. 8 (1983) p. 24.
See Reference 2, especially Part VIII.
A.E. Morgan, Nucl. Instrum. Meth. Phys. Res. 218 (1983) p. 401.
C.H. Becker, Scanning Electron Microsc. IV (1986), p. 1267.
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Pallix, J.B., Becker, C.H. & Newman, N. Surface Analysis by Laser Ionization. MRS Bulletin 12, 52–58 (1987). https://doi.org/10.1557/S0883769400067233
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DOI: https://doi.org/10.1557/S0883769400067233