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Modeling of Atomistic Processes in Semiconductors: from Defect Signatures to a Hierarchy of Annealing Mechanisms

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Abstract

The modeling of atomistic processes in semiconductors based on the density functional theory is outlined. The role of intrinsic defects in the self and dopant diffusion, as well as in the dopant activation is investigated for the case of silicon carbide. A hierarchy of annealing mechanisms for vacancies and interstitials is proposed. The identification of the microscopic origin of experimental defect centers by calculated defect signatures establishes a link between theoretical modeling and experiments.

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Authors and Affiliations

  1. Fisica de Materiales, Universidad de Pais Vasco, Apto 1072, San Sebastian, Spain

    Michel Bockstedte

  2. Theoretische Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7B2, 91058, Erlangen, Germany

    Michel Bockstedte

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  1. Michel Bockstedte
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Bockstedte, M. Modeling of Atomistic Processes in Semiconductors: from Defect Signatures to a Hierarchy of Annealing Mechanisms. MRS Online Proceedings Library 978, 801 (2006). https://doi.org/10.1557/PROC-978-0978-GG08-01

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  • DOI: https://doi.org/10.1557/PROC-978-0978-GG08-01

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