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Modeling of Structural Defects in Silicon Carbide

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Abstract—

This paper reports DFT calculations of the electron density in pure and imperfect silicon carbide clusters. The local levels produced in the band gap by doping are shown to be determined predominantly by intrinsic states of the silicon and carbon.

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Authors and Affiliations

  1. North-Caucasus Federal University, ul. Pushkina 1, 355009, Stavropol, Russia

    E. V. Sokolenko & G. V. Slyusarev

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  1. E. V. Sokolenko
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  2. G. V. Slyusarev
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Correspondence to E. V. Sokolenko.

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Translated by O. Tsarev

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Sokolenko, E.V., Slyusarev, G.V. Modeling of Structural Defects in Silicon Carbide. Inorg Mater 55, 19–31 (2019). https://doi.org/10.1134/S0020168519010151

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  • DOI: https://doi.org/10.1134/S0020168519010151

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