Abstract
Nanofabrication on a hydrogen-terminated diamond surface is performed usingan atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm aresuccessfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed ofone side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).
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Tachiki, M., Fukuda, T., Seo, H. et al. Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope. MRS Online Proceedings Library 675, 1251 (2001). https://doi.org/10.1557/PROC-675-W12.5.1
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DOI: https://doi.org/10.1557/PROC-675-W12.5.1