Abstract
This paper presents some of the widely used characterization tools for antimonide based III-V compounds, focusing on characterization of defects that limit device operation. The effect of microstructure on the electro-optical properties of GaSb and GaInAsSb important in devices is emphasized.
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Dutta, P.S., Gutmann, R.J., Charache, G.W. et al. Microstructural Characterization of Antimonide Based III-V Compounds and their Effect on Electro-Optical Properties of Substrate Materials and Devices. MRS Online Proceedings Library 588, 187 (1999). https://doi.org/10.1557/PROC-588-187
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DOI: https://doi.org/10.1557/PROC-588-187