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Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

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Abstract

Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.3 1) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2×1016 cm-3µ=350 cm2.V-1. S-1).

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Acknowledgement

This work was supported by the Australian Research Council (ARC), and the Cooperative Research Centre for Broadband Telecommunications and Networking (CRC-BTN).

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands, WA, 6907, Australia

    C. A. Musca, E. P. G. Smith, J. F. Siliquini, J. M. Dell, J. Antoszewski, J. Piotrowski & L. Faraone

  2. Vigo System Ltd., HERY 23, 01-494, Warsaw, Poland

    J. Piotrowski

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  1. C. A. Musca
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  2. E. P. G. Smith
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  3. J. F. Siliquini
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  4. J. M. Dell
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  5. J. Antoszewski
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  6. J. Piotrowski
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  7. L. Faraone
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Correspondence to C. A. Musca.

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Musca, C.A., Smith, E.P.G., Siliquini, J.F. et al. Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe. MRS Online Proceedings Library 484, 353–358 (1997). https://doi.org/10.1557/PROC-484-353

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