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Improved CdZnTe detectors grown by vertical Bridgman process

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Abstract

The γ ray (57Co) and a particle (241Am) detector response of Cd1-xZnxTe crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Postgrowth processing was utilized to produce a high-resistivity material with improved chargecollection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the lowenergy tailing of the γ -ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV γ -photon line in crystals with x=0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from 57Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise.

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Authors and Affiliations

  1. Dept. of Phyiscs, Washington State University, Pullman, WA, 99164-2814, USA

    K. G. Lynn & M. Weber

  2. Johnson Matthey Electronics, Spokane, WA, 99216, USA

    H. L. Glass & J. P. Flint

  3. eV Products division of II-VI, IInc., Saxonburg, PA, 16056, USA

    Cs. Szeles

Authors
  1. K. G. Lynn
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  2. M. Weber
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  3. H. L. Glass
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  4. J. P. Flint
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  5. Cs. Szeles
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Lynn, K.G., Weber, M., Glass, H.L. et al. Improved CdZnTe detectors grown by vertical Bridgman process. MRS Online Proceedings Library 484, 319–328 (1997). https://doi.org/10.1557/PROC-484-319

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  • DOI: https://doi.org/10.1557/PROC-484-319

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