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New Type of ir Photodectors Based on Lead Telluride and Related Alloys

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Abstract

Doping of the lead telluride and related alloys with the group III impurities results in an appearance of the unique physical features of a material, such as such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review the physical principles of operation of the photodetecting devices based on the group ifi-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group IIIdoped IV-VI in comparison with the modem photodetectors are summarized.

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Acknowledgement

The research described in this paper was supported in part by the grants of the Russian Foundation for the Basic Research (RFBR) No. 95-02-04658-a and No. 96-02-16275-a, by the INTAS-RFBR grant No. 95-1136 and by the Grant of the President of Russian Federation for the Young Scientists-Doctors of Science No. 96-15-96957.

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  1. Physics Department, Moscow State University, Moscow, 119899, Russia

    D. R. Khokhlov

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  1. D. R. Khokhlov
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Correspondence to D. R. Khokhlov.

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Khokhlov, D.R. New Type of ir Photodectors Based on Lead Telluride and Related Alloys. MRS Online Proceedings Library 484, 295–300 (1997). https://doi.org/10.1557/PROC-484-295

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