Abstract
Semiconductor multiple-electrode detectors have been developed for the purpose of reducing effects of hole trapping in room-temperature radiation detectors.1,2 Some reported geometries maintain a nearly-uniform electric field inside the detector, but others generate an electric field that is very non-uniform and highly-concentrated at the anode. This paper reports the results of mapping such a detector (having a non-uniform electric field) with a finely collimated gamma-ray beam to determine the detector response as a function of position.
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References
P.N. Luke, IEEE Trans. Nucl. Sci., vol.42, No. 4, pp. 207–213, Aug. 1995.
C.L. Lingren, B. Apotovsky, J.F. Butler, R.L. Conwell, F.P. Doty, S.J. Friesenhahn, A. Oganesyan, B. Pi, S. Zhao, presented at the 1997 IEEE Nucl. Sci. Sym., Nov. 11, 1997, Albuquerue, NM (submitted for publication in conference proceedings).
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Lingren, C.L., Apotovsky, B., Butler, J.F. et al. Mapping Detector Response Over the Area of a CdZnTe-Multiple-Electrode Detector. MRS Online Proceedings Library 484, 291–294 (1997). https://doi.org/10.1557/PROC-484-291
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DOI: https://doi.org/10.1557/PROC-484-291