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Recent Improvements in Dry Etching of Hg1-xCdxTe by CH4 Based Electron Cyclotron Resonance Plasmas

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Abstract

Significant improvements of a previously reported etching process {xc[1]} for Hg1-xCdxTe have been achieved with respect to etch rate, surface morphology and surface stoichiometry by optimization of the process parameters. The gas phase and surface reactions driving the etching process have been analyzed by combined optical and electrical characterization of the plasma and surface analyses of the samples. A reaction scheme is suggested which allows to model and upscale the process in a consistent manner.

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Acknowledgement

The samples have been kindly provided by T. Simon and H. Palm, AIM, Heilbronn, Germany.

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Authors and Affiliations

  1. Fraunhofer Institut für Angewandte Festkörperphysik, 79108, Freiburg, Germany

    M. Seelmann-Eggebert, A. Rar, H. Zimmermann & P. Meisen

  2. presently at National Research Institute for Metals, Tsukuba, Ibaraki 305, Japan

    A. Rar

Authors
  1. M. Seelmann-Eggebert
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  2. A. Rar
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  3. H. Zimmermann
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  4. P. Meisen
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Seelmann-Eggebert, M., Rar, A., Zimmermann, H. et al. Recent Improvements in Dry Etching of Hg1-xCdxTe by CH4 Based Electron Cyclotron Resonance Plasmas. MRS Online Proceedings Library 484, 259–266 (1997). https://doi.org/10.1557/PROC-484-259

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