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3.2 AND 3.8 fum Emission and Lasing in AlGaAsSb/InGaAsSb Double Heterostructures with Asymmetric Band Offset Confinements

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Abstract

We report the first observations of electroluminescence (EL) and lasing in laser structures with high Al-content (x=0.64, Eg=1.474 eV) cladding layers and a narrow-gap InGaAsSb active layer (Eg=0.326 eV at T=77K). The structures are LPE-grown lattice-matched to GaSb substrate. Band energy diagrams of the laser structures had strongly asymmetric band offsets. The heterojunction between high Al-content layer and InGaAsSb narrow-gap active layer has a type II broken-gap alignment at 300K. In this laser structure spontaneous emission was obtained at 7n=3.8fum at T=77K and 7n=4.25 fum at T=300K. Full width at half maximum (FWHM) of emission band was 34 meV. Emission intensity decreased by a factor of 30 from T=77K to 300K. Lasing with single dominant mode was achieved at 7n=3.774 fum (T=80K) in pulsed mode. Threshold current as low as 60 mA and characteristic temperature T0=26K were obtained at T=80-120K.

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References

  1. H.K. Choi, G.W. Turner Appl.Phys.Lett. 67, 332 (1995)

    Article  CAS  Google Scholar 

  2. T.N. Danilova, A.N. Imenkov, O.G. Ershov, M V. Stepanov, V.V. Sherstnev, Yu.P. YakovlevSemiconductors, 29 (7), 667 (1995)

    Google Scholar 

  3. H.K. Choi, G.W. Turner, S.Y. Eglash IEEE Photonics Technol. Lett., 6, 7 (1994)

    Article  Google Scholar 

  4. Yu.P. Yakovlev, M.P. Mikhailova, G.G. Zegrya, K.D. Moiseev, O.G. Ershov Techn.Digest CLEO-96, USA, Anaheim CA, 2-7 June 1996, p. 170

    Google Scholar 

  5. H.K. Choi, G.W. Tumer, Z.L. LiauAppl.Phys.Lett. 65, 2251 (1994)

    Article  CAS  Google Scholar 

  6. R.I. Kazarinov, G.L. BelenkyIEEE J.Quant.Electr., 31 423 (1995)

    Article  CAS  Google Scholar 

  7. K.B. Wong, G.K.A. Gopir, Y.P. Hagon, M. Yaros Semicond.Sci.Technol., 9, 2210 (1994)

    Article  CAS  Google Scholar 

  8. M.P. Mikhailova, I.A. Andreev, T.I. Voronina, T.S. Lagunova, K.D. Moiseev, Yu.P. Yakovlev Semiconductors, 29 (4), 353 (1995)

    Google Scholar 

  9. M.P. Mikhailova, K.D. Moiseev, G.G. Zegrya, Yu.P. Yakovlev Solid State Electr. 40 (8), 673 (1996)

    Article  CAS  Google Scholar 

  10. S. Ideshita, A. Furukawa, Y. Mochizuki, M. Mizuta Appl.Phys.Lett. 60, 2549 (1992)

    Article  CAS  Google Scholar 

Download references

Acknowledgement

Authors thank Prof.G.Zegrya for the valuable discussion. This work was supported in part by the Russian project #1-074 “Solid-State nanostructures physics” and RBRF project # 96-0217841a.

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Authors and Affiliations

  1. Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia

    M. P. Mikhailova, B. E. Zhurtanov, K. D. Moiseev, A. N. Imenkov, O. G. Ershov & Yu. P. Yakovlev

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  1. M. P. Mikhailova
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  2. B. E. Zhurtanov
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  3. K. D. Moiseev
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  4. A. N. Imenkov
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  5. O. G. Ershov
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  6. Yu. P. Yakovlev
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Mikhailova, M.P., Zhurtanov, B.E., Moiseev, K.D. et al. 3.2 AND 3.8 fum Emission and Lasing in AlGaAsSb/InGaAsSb Double Heterostructures with Asymmetric Band Offset Confinements. MRS Online Proceedings Library 484, 101–106 (1997). https://doi.org/10.1557/PROC-484-101

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  • DOI: https://doi.org/10.1557/PROC-484-101

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