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Ion-beam formation and track modification of InAs nanoclusters in silicon and silica

  • Proceedings of the 22nd International Conference “Ion-Surface Interaction (ISI-2015)”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 1014 cm–2 are studied. It is found that post-implantation annealing and irradiation with high-energy ions alter the size and shape of nanoclusters and cause structural transformations within them. The ordering of nanoclusters and their elongation along the trajectory of Xe ions in a SiO2 matrix is observed.

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Authors and Affiliations

  1. Sevchenko Institute of Applied Physical Problems, Belarusian State University, Minsk, 220030, Belarus

    F. F. Komarov, O. V. Milchanin, M. A. Makhavikou & V. N. Yuvchenko

  2. Joint Institute for Nuclear Research, Dubna, 141980, Russia

    V. A. Skuratov

  3. Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth, 6031, South Africa

    A. Janse van Vuuren & J. N. Neethling

  4. Friedrich Schiller University Jena, 07743, Jena, Germany

    E. Wendler

  5. Belarusian State University, Minsk, 220030, Belarus

    L. A. Vlasukova & I. N. Parkhomenko

Authors
  1. F. F. Komarov
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  2. O. V. Milchanin
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  3. V. A. Skuratov
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  4. M. A. Makhavikou
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  5. A. Janse van Vuuren
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  6. J. N. Neethling
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  7. E. Wendler
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  8. L. A. Vlasukova
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  9. I. N. Parkhomenko
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  10. V. N. Yuvchenko
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Corresponding author

Correspondence to F. F. Komarov.

Additional information

Original Russian Text © F.F. Komarov, O.V. Milchanin, V.A. Skuratov, M.A. Makhavikou, A. Janse van Vuuren, J.N. Neethling, E. Wendler, L.A. Vlasukova, I.N. Parkhomenko, V.N. Yuvchenko, 2016, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2016, Vol. 80, No. 2, pp. 160–164.

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Komarov, F.F., Milchanin, O.V., Skuratov, V.A. et al. Ion-beam formation and track modification of InAs nanoclusters in silicon and silica. Bull. Russ. Acad. Sci. Phys. 80, 141–145 (2016). https://doi.org/10.3103/S106287381602012X

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  • DOI: https://doi.org/10.3103/S106287381602012X

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