Abstract
Using a specific combination of energetic and chemical processes we have grown homoepitaxial diamond on and lifted it off of a type Ia natural C(100) crystal. Before growth, the C(100) crystal is exposed to a self implant of 190keV energy and dose of 1E16 cm-2. Low temperature (~600°C) homoepitaxial diamond growth conditions were used that are based on water-alcohol source chemistries. To achieve layer separation (lift-off), samples were annealed to a temperature sufficient to graphitize the buried implant-damaged region. Contactless electrochemical etching was found to remove the graphite, and a transparent synthetic (100) single crystal diamond plate of 17.5μm thickness was lifted off. This free-standing diamond single crystal plate was characterized and found to be comparable to homoepitaxial films grown on unimplanted single crystal diamond.
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Gurarie, V.N., Orlov, A.V., Bursill, L.A. et al. High-Pressure Pulsed Plasma Synthesis of Carbon-Nitride Thin Films. MRS Online Proceedings Library 388, 293–298 (1995). https://doi.org/10.1557/PROC-388-293
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DOI: https://doi.org/10.1557/PROC-388-293