Abstract
Undoped nanocrystalline diamond (NCD) films less than 1 μm thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600°C for one hour.
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The work was supported by the Institute of Applied Physics of the Russian Academy of Science, project no. 0035-2019-0003.
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Vikharev, A.L., Bogdanov, S.A., Ovechkin, N.M. et al. Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition. Semiconductors 55, 66–75 (2021). https://doi.org/10.1134/S106378262101019X
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DOI: https://doi.org/10.1134/S106378262101019X