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Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD

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Abstract

Silicon multiquantum wells ranging in width from 3 to 15 nm were deposited on closely lattice-matched ZnS barriers. MOCVD was used to deposit the ZnS films using diethyl zinc and hydrogen sulfide as the precursors; disilane was used to deposit silicon layers at low temperatures. Single and multiple silicon nano-layers were observed by transmission electron microscopy and secondary ion mass spectrometry. Photoluminesence studies revealed emissions peaks which were blue-shifted with respect to the edge emission from bulk silicon substrates. The observation of emission from silicon nanostructures shifted to wavelengths as short as the 800-850 nm range is consistent with the effects of quantum confinement in silicon nanostructures.

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Authors and Affiliations

  1. Spire Corporation, One Patriots Park, Bedford, MA, 01730, USA

    H. Paul Maruska & R. Sudharsanan

  2. Chemical Engineering Department, University of Florida, Gainesville, FL, 32611, USA

    Eric Bretschneider, Albert Davydov, J. E. Yu, Balu Pathangey & Timothy J. Anderson

  3. Materials Science Department, University of Florida, Gainesville, FL, 32611, USA

    K. S. Jones

Authors
  1. H. Paul Maruska
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  2. R. Sudharsanan
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  3. Eric Bretschneider
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  4. Albert Davydov
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  5. J. E. Yu
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  6. Balu Pathangey
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  7. K. S. Jones
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  8. Timothy J. Anderson
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Additional information

This work was supported in part by an SBIR contract DE-FG02-93ER81620 funded by the United States Department of Energy.

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Maruska, H.P., Sudharsanan, R., Bretschneider, E. et al. Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD. MRS Online Proceedings Library 358, 987 (1994). https://doi.org/10.1557/PROC-358-987

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  • DOI: https://doi.org/10.1557/PROC-358-987

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