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Determination of the Strain Status of GaAs/AlAs Quantum Wires and Quantum Dots

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Abstract

We have investigated periodic arrays of 150 and 175 nm wide GaAs-AlAs quantum wires and quantum dots, fabricated by electron beam lithography and SiCI4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry (TAD). The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightlyincreases for the wires and even more so for the dots.

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References

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Authors and Affiliations

  1. Institut für Halbleiterphysik, Johannes Kepler Universitat Linz, Altenbergerstraβe 69, A-4040, Linz, Austria

    A. A. Darhuber & G. Bauer

  2. Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, UK

    P. D. Wang, Y. P. Song, C. M. Sotomayor Torres & M. C. Holland

Authors
  1. A. A. Darhuber
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  2. G. Bauer
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  3. P. D. Wang
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  4. Y. P. Song
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  5. C. M. Sotomayor Torres
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  6. M. C. Holland
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Darhuber, A.A., Bauer, G., Wang, P.D. et al. Determination of the Strain Status of GaAs/AlAs Quantum Wires and Quantum Dots. MRS Online Proceedings Library 358, 975 (1994). https://doi.org/10.1557/PROC-358-975

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  • DOI: https://doi.org/10.1557/PROC-358-975

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