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Porous Silicon: A Possible Buffer Layer for Diamond Growth on Silicon Substrates

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Abstract

Continuous diamond films have been grown on porous silicon by hot filament chemical vapor deposition. The demonstration of diamond growth on porous silicon seems to suggest that porous silicon can act as a buffer layer for diamond growth on Si substrates, and that the nanoscale structures of porous silicon play an important role in nucleation and growth of diamond.

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Authors and Affiliations

  1. The State Key Lab. of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People’s Republic of China

    Zhaohui Liu & Zhangda Lin

  2. Department of Physics, Peking University, Beijing, 100871, China

    B. Q. Zong

Authors
  1. Zhaohui Liu
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  2. B. Q. Zong
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  3. Zhangda Lin
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Liu, Z., Zong, B.Q. & Lin, Z. Porous Silicon: A Possible Buffer Layer for Diamond Growth on Silicon Substrates. MRS Online Proceedings Library 358, 805 (1994). https://doi.org/10.1557/PROC-358-805

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  • DOI: https://doi.org/10.1557/PROC-358-805

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