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Microcrystalline β−SiC Growth on Si by ECR-CVD at 500°C

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Abstract

Microcrystalline β-SiC films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at 500°C utilizing a SiH4-CH4-H2 gas mixture. The effects of two important parameters on film growth, SiH4/CH4 flow ratio and microwave (MW) power, were investigated using X-ray photoelectron spectroscopy (XPS) along with the Fourier transform infrared spectra (FTIR). Results showed that the optimum flow ratio is about 0.5. Under the optimum flow ratio, a large MW power is favorable for the growth of high quality films with an ideal film stoichiometry. Surface morphology inspected by the contact mode atomic force microscopy (AFM) reveals that high MW powers not only improve the film crystallinity but also increase its surface roughness as well.

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References

  1. S. M. Rossnagel, J. J. Cuomo, and W. D. Westwood, Hand Book of Plasma processing Technology, (Noyes Publications, New Jersey, 1990)

    Google Scholar 

  2. S. Nishino, H. Suhara, H. Ono, and H. Matsunami, J. Appl. Phys. 61, 4889 (1987).

    Article  CAS  Google Scholar 

  3. K. L. Cheng, H. C. Cheng, C. C. Liu, C. Lee, and T. R. Yew, (submitted to Appl. Phys. Lett.).

  4. C. C. Liu, C. Lee, K. L. Cheng, H. C. Cheng, and T. R. Yew, (to be published by Appl. Phys. Lett.).

  5. I. Kusunoki and Y. Igari, Appl. Surf. Sci., 59, 95 (1992).

    Article  CAS  Google Scholar 

  6. M. N. Rahaman and L. C. DeJongle, Am. Ceram. Soc. Bull., 66, 782 (1987).

    CAS  Google Scholar 

  7. D. Briggs and M. P. Seah, Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, (John Wiley & Sons, New York, 1983).

    Google Scholar 

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Authors and Affiliations

  1. Dept. of Elec. Eng., National Chiao-Tung University, Hsinchu, Taiwan, China

    Kuan-Lun Cheng & Huang-Chung Cheng

  2. Dept. of Chem. Eng., National Taiwan Institute of Technology, Taipei, Taiwan, China

    Chih-Chien Liu & Chiapyng Lee

  3. Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, China

    Tri-Rung Yew

Authors
  1. Kuan-Lun Cheng
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  2. Chih-Chien Liu
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  3. Huang-Chung Cheng
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  4. Chiapyng Lee
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  5. Tri-Rung Yew
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Cheng, KL., Liu, CC., Cheng, HC. et al. Microcrystalline β−SiC Growth on Si by ECR-CVD at 500°C. MRS Online Proceedings Library 358, 799 (1994). https://doi.org/10.1557/PROC-358-799

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  • DOI: https://doi.org/10.1557/PROC-358-799

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