Abstract
Microcrystalline silicon films deposited by plasma methods have an optical absorption for photon energies above 2.0 eV lower than a-Si:H films and can be efficiently doped with boron or phosphorus. The most widely used deposition technique is the 13.56 MHz PECVD. However quite recently μc-Si:H films were grown at high deposition rates by the 70 MHz PECVD. In this work the authors report on a comparison between μc-Si:H films deposited by both 70 MHz and 13.56 MHz techniques. Particular attention has been devoted to differences and similarities between structural, compositional and electrical properties of the films deposited with the two systems.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. D. Moustakas, D. A. Weitz, E. B. Prestridge, R. Friedman, “morphous Silicon Technology” (Mat. Res. Soc. Symp. Proc., Pittsburg, Pennsylvania, 1985), vol. 38, p. 401.
F. Finger, R. Carius, P. Hapke, K. Prasad and R. Fluckiger, “morphous Silicon Technology-1993” (Mat. Res. Soc. Symp. Proc., Pittsburg, Pennsylvania, 1993), vol. 283, p. 471.
R. Flückiger, J. Meier, H. Keppner, M. Götz and A. Shah, “Proc. of the 23rd IEEE Photovoltaic Spec. Conf.” (ouisville, Kentucky, 1993), p. 839.
J. Kanicki, “morphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices” (Artech House, London, 1991) vol. 1.
J. Meier, R. Flückiger, H. Keppner and A. Shah, Appl. Phys. Lett. 65, 860 (1994).
J. Meier, R. Fluckiger, H. Keppner, M. Götz and A. Shah, “Proc. of the 11 th EC Photovoltaic Conference” (Amsterdam, 1994), p. 1237.
Y. Mishima, S. Miyazaki, M. Hirose, Y. Osaka, Phil. Mag. B 46, 1 (1982).
A. Matsuda, J. Appl. Phys. 59/60, 767 (1983).
C. C. Tsai, “mourphous Silicon and Related Materials” Ed. H. Fritzsche (World Sc. Publ. Comp:, 1988) p. 123.
R. Fluckiger, J. Meier, H. Keppner, U. Kroll, A. Shah, O. Greim, M. Morris, J. Pohl, P. Hapke and R. Carius, “Proceeding of the 11th EC Photovoltaic Conference” (Montreux, 1992) p. 617.
A. Madan, P. R. Rava, E. I. Schropp, Von B. Roedern, Appl. Surf. Science, 70/71, 716 (1993).
H. Curtins, N. Wyrsch and A. V. Shah, Electronics Lett. 23 (5), 228 (1987).
P. Scherrer, Nachr. Goettinger Gesell. 98 (1918); Zsigmondy’s Kolloidchemie 3rd Ed., p. 394.
Z. Iqbal, S. Veprek, A. P. Webb, P. Capezzuto, Sol. St. Comm. 37, 993 (1981).
H. Heintze, R. Zedlitz, J. Non-Cryst. Solids 164-166, 55 (1993).
U. Kroll, Y. Ziegler, J. Meier, H. Keppner and A. Shah, “Amorphous Silicon Technology-1994” (Mat. Res. Soc. Proc., Pittsburg, Pennsylvania, in press).
Ch Hollenstein., U. Kroll, A. A. Howling and J. Dutta, “Proc. 11th Phot. Solar Energy Conf.” (Montreux, 1992).
K. Prasad, Ph.D. thesis, Institute of Microtechnology, University of Neuchâtel, 1991.
R. Flückiger, J. Meier, A. Shah, A. Catana, M. Brunel, H. V. Nguyen, R. W. Collins and R. Carius, “Amorphous Silicon Technology-1994” (Mat. Res. Soc. Symp. Proc., Pittsburg, Pennsylvania, in press).
I. Simon, H. O. McMahon, J. Chem. Phys. 21, 23 (1953).
F. Demichelis, G. Crovini, C. F. Pirri, E. Tresso, Phil. Mag. B 68, 329 (1993).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Flückiger, R., Meier, J., Crovini, G. et al. Structural and Electrical Properties of Undoped Microcrystalline Silicon Grown by 70 MHz and 13.56 MHz PECVD. MRS Online Proceedings Library 358, 751 (1994). https://doi.org/10.1557/PROC-358-751
Published:
DOI: https://doi.org/10.1557/PROC-358-751