Abstract
The effect of excess silicon on the growth and microstructure of cosputtered TiSi2 was investigated. Cosputtered films, with Si/Ti ratios between 2.5 and 4.5, were deposited on (100) Si substrates and reacted at temperatures from 650° to 1050°C. Excess Si in the as deposited films formed a layer of epitaxial Si on the Si substrate. In addition, Si and SiO2 precipitates formed within the grains. The films became discontinuous when reacted at 1050°C.
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References
S. P. Murarka, J. Vac. Sci. Technol, 17, 775 (1980).
P. Lew, Ph.D. Thesis, Stanford University, Stanford, CA (1983).
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Beyers, R., Sinclair, R. & Thomas, M.E. TEM Studies of Cosputtered TiSi2 Films Containing Excess Silicon. MRS Online Proceedings Library 25, 601–605 (1983). https://doi.org/10.1557/PROC-25-601
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DOI: https://doi.org/10.1557/PROC-25-601