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Optical, Electrical, and Crystal Properties of TiO2 Thin Films Grown by Atomic Layer Deposition on Silicon and Glass Substrates

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Abstract

TiO2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO2/glass and TiO2/Si thin films was carried out, varying the deposition temperature in the range from 100°C to 250°C while keeping the number of reaction cycles fixed at 1000. Physical and material property analyses were performed to investigate optical and electrical properties, composition, structure, and morphology. TiO2 films grown by ALD may represent promising materials for future applications in optoelectronic devices.

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Authors and Affiliations

  1. Department of Metallurgical and Materials Engineering, Faculty of Technology, Gazi University, 06500, Ankara, Turkey

    I. Kupa, Y. Unal, L. Durna & H. Ates

  2. Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey

    S. S. Cetin

  3. Tubitak Space Technologies Research Institute, Ankara, Turkey

    K. Topalli

  4. Okyay Tech., Yenimahalle, Ankara, Turkey

    I. Kupa & A. K. Okyay

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  1. I. Kupa
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  2. Y. Unal
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  3. S. S. Cetin
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  4. L. Durna
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  6. A. K. Okyay
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  7. H. Ates
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Correspondence to H. Ates.

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Kupa, I., Unal, Y., Cetin, S.S. et al. Optical, Electrical, and Crystal Properties of TiO2 Thin Films Grown by Atomic Layer Deposition on Silicon and Glass Substrates. J. Electron. Mater. 47, 4502–4507 (2018). https://doi.org/10.1007/s11664-018-6370-y

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  • DOI: https://doi.org/10.1007/s11664-018-6370-y

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