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Optical Studies of Microstructure in a-Si:H

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Abstract

A set of samples grown under different substrate temperature has been characterised by complex optical, photoelectrical and transport measurements. A very sensitive and simple method for detection of optical scattering in a device quality amorphous silicon has been demonstrated. The spectral dependence of the optical scattering coefficient αs(E) can give us information on the nature and concentration of the scattering centers in a-Si:H thin films.

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Acknowledgement

The authors wish to thank Dr. H. Mahan from SERI for providing us a device quality a- Si:H sample and its SAXS results. We gratefully acknowledge stimulating discussions with R. Crandall and H. Mahan and with Dr. Holoubek of the Institute of Macromolecular Chemistry, Czechoslovak Academy of Sciences and technical assistance of U. Kroll, B. Leutz and A. Mettler, IMT Neuchâtel. This work was partly founded by the Swiss Federal Research Grant OFEN EF-REN 87(9)

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Authors and Affiliations

  1. Institute of Physics, Czechoslovak Academy of Sciences, Na Slovance 2, CS-180 40, Praha, Czechoslovakia

    M. Vaněček & D. Červinka

  2. Institute of Microtechnology, Breguet 2, CH-2000, Neuchâtel, Switzerland

    M. Favre, H. Curtins & A. V. Shah

Authors
  1. M. Vaněček
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  2. D. Červinka
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  3. M. Favre
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  4. H. Curtins
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  5. A. V. Shah
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Vaněček, M., Červinka, D., Favre, M. et al. Optical Studies of Microstructure in a-Si:H. MRS Online Proceedings Library 192, 639–644 (1990). https://doi.org/10.1557/PROC-192-639

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  • DOI: https://doi.org/10.1557/PROC-192-639

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