Abstract
The transport properties of intrinsic micro-crystalline and amorphous SiGe films are investigated. In the amorphous system it is found that the electron lifetime is relatively independent of band gag while the electron mobility of a-Ge:H is a factor of ten less than that of a-Si:H. Micro-crystalline silicon films have greater excess photo-conductivity as compared to a-Si:H predominantly due to longer effective lifetimes. Films containing micro-crystalline silicon in a matrix of a-SiGe:H have been prepared and are found to have comparatively poor transport.
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Fortmann, C.M., Albright, D.E., Campbell, I.H. et al. The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys. MRS Online Proceedings Library 164, 315–320 (1989). https://doi.org/10.1557/PROC-164-315
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DOI: https://doi.org/10.1557/PROC-164-315