Abstract
High fluence of low energy Ge+ ions were implanted into Si matrix. We have also deposited Ge and SiO2 composite films using the Atom beam sputtering (ABS). The as implanted/as-deposited films were irradiated by Swift Heavy Ions (SHI) with various energies and fluences. These pristine and irradiated samples were subsequently characterized by XRD and Raman to understand the crystallization behavior. Raman studies of the films indicate the formation of Ge crystallites as a result of SHI irradiation. Glancing angle X-ray diffraction results also confirm the presence of Ge crystallites in the irradiated samples. Moreover, the crystalline nature of Ge improves with an increase in ion fluence. Rutherford back scattering was used to quantify the concentration of Ge in SiO2 matrix and the film thickness. These detailed results have been discussed and compared with the ones available in literature. The basic mechanism for crystallization induced by SHI in these films will be presented.
Similar content being viewed by others
References
Canham L T 1990 Appl. Phys. Lett. 57 1046
Pavesi L {etet al} 2000 Nature 408 440
T Tanagahara and K Takeda, Phys Rev B 46, 15578 (1992)
Y Maeda, Phys. Rev. B 5, 1658 (1995).
M Nogami and Y Abe, Appl. Phys. Lett. 65, 2545 (1994).
Jia-Yu Zhang, Xi-Mao Bao and Yong-Hong Ye, Thin Solid Films 323, 68 (1998)
V Cracium, C B Leborgne, E J Nicholls and I W Boyd, Appl. Phys. Lett. 69, 1506 (1996).
A. V. Kolobov, S. Q. Wei, W. S. Yan, H. Oyanagi, Y. Maeda, and K. Tanaka Phys. Rev. B 67, 195314 (2003).
Y K Mishra, S Mohapatra, D Kabiraj, B Mohanta, N P Lalla, J C Pivin and D K Avasthi. Scripta Mater. 56, 629 (2007)
B. D. Cullity, Elements of X-ray Diffraction, 2nd. Ed., Addison-Wesley, reading, MA, 1978, p.102.
H Ritcher, Z P Wang, L Ley, Solid State Commun. 39, 625 (1981)
W. Hayes, R. Loudon, Scattering of Light by crystals, Wiley, New York, 1978
P.K. Giri, R. Kesavamoorthy, S. Bhattacharya, B.K. Panigrahi, K.G.M. Nair. Materials Science and Engineering B 128, 201 (2006)
P K Giri, R Keasavamoorthy, B K Panigrahi and K G M Nair Nucl. Inst. and Meth. B 244, 56 (2006)
M. Toulemonde, C. Dufour, E. Paumier, Phys. Rev. B 46 (1992) 14362
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Srinivasa Rao, N., Pathak, A.P., Kabiraj, D. et al. Ion beam synthesis of Ge nanocrystals embedded in SiO2 matrix. MRS Online Proceedings Library 1181, 114–122 (2009). https://doi.org/10.1557/PROC-1181-DD11-03
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-1181-DD11-03