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Growth of endotaxial Ge nanocrystals in Si(100) matrix via low-energy ion implantation

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Abstract

Embedded structures in a crystalline substrate, endotaxial structures, play a major role in thermoelectric and optoelectronic applications. Here, we have fabricated Ge nanostructures inside Si(100) matrix via low-energy Ge+ ion implantation. Thermally grown SiO2 layer over the Si substrate has been used as a protective coating to avoid low-energy sputtering of the Si surface. 300 keV Ge ions are implanted into Si(100) matrix at two different fluences, 1 × 1015 and 5 × 1015 ions/cm2. After annealing the as-implanted specimens at 800 °C under the inert atmosphere for 1 h, the growth of Ge nanoclusters has been studied by Raman spectroscopy. Endotaxial nature of the Ge nanocrystals has been studied using cross-sectional high-resolution TEM. The compatibility between Ge and Si at the nanocrystal/matrix interface has been discussed in detail using high-resolution phase-contrast imaging.

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Acknowledgements

This work is funded by UGC-DAE-CSR-KC/CRS/15/IOP/MS/01 collaborative research project. The authors would like to thank Prof. P V Satyam, IOP, Bhubaneswar, for providing access to the electron microscopy facility.

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Author notes

  1. Puspendu Guha

    Present address: RIAM, College of Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea

Authors and Affiliations

  1. Centre for Incubation, Innovation, Research and Consultancy, Jyothy Institute of Technology, Visvesvaraya Technological University, Bengaluru, 560082, India

    Susheel Kumar Gundanna & Umananda M. Bhatta

  2. Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751005, India

    Puspendu Guha

  3. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400085, India

    Puspendu Guha

  4. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakam, 603102, India

    B. Sundaravel

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  1. Susheel Kumar Gundanna
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Correspondence to Umananda M. Bhatta.

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Gundanna, S.K., Guha, P., Sundaravel, B. et al. Growth of endotaxial Ge nanocrystals in Si(100) matrix via low-energy ion implantation. Appl. Phys. A 125, 874 (2019). https://doi.org/10.1007/s00339-019-3170-z

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