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Germanium ALD/CVD Precursors for Deposition of Ge/GeTe Films

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Abstract

In order to deposit conformal films in the high aspect ratio trench and via structures in future high-density phase-change memory devices, suitable ALD/CVD precursors are needed. We report on the development of novel germanium(II) metal-organic ALD/CVD precursors containing amide, cyclopentadienyl, and amidinate ligands. The physical properties, volatility, and thermal behavior of the precursors were evaluated by simultaneous thermal analysis (STA) and vapor pressure measurements. Stability studies were conducted to investigate the suitability of the precursors for use as ALD/CVD precursors for device manufacturing.

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Authors and Affiliations

  1. ATMI, 7 Commerce Dr., Danbury, 06810, CT, USA

    William Hunks, Philip S. Chen, Tianniu Chen, Matthias Stender, Gregory T. Stauf, Leah Maylott, Chongying Xu & Jeffrey F. Roeder

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  1. William Hunks
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  2. Philip S. Chen
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  3. Tianniu Chen
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  4. Matthias Stender
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  5. Gregory T. Stauf
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  6. Leah Maylott
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  7. Chongying Xu
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  8. Jeffrey F. Roeder
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Hunks, W., Chen, P.S., Chen, T. et al. Germanium ALD/CVD Precursors for Deposition of Ge/GeTe Films. MRS Online Proceedings Library 1071, 10710911 (2007). https://doi.org/10.1557/PROC-1071-F09-11

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  • DOI: https://doi.org/10.1557/PROC-1071-F09-11

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