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A high growth rate process of ALD CeOx with amidinato-cerium [(N-iPr-AMD)3Ce] and O3 as precursors

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Abstract

In this paper, a novel approach was studied to fabricate ALD CeOx films with amidinato-cerium (N-iPr-AMD)3Ce and O3 as precursors. Ideal self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown CeOx films, which possessed a high and constant growth rate of ~ 2.8 Å/cycle at 220–255 °C, were confirmed by XPS, XRD, SEM and AFM. The CeOx films could uniformly and conformally be deposited into deep and narrow trenches (high aspect ratio of 10:1), suggesting the good potential of this ALD process for complex 3D nanostructure-based applications. Furthermore, first-principles calculations based on density functional theory were performed to investigate possible interfacial reactions of this ALD process on the SiO2 surface.

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Acknowledgements

We gratefully acknowledge financial support for this work from the Natural Science Foundation of Jiangsu Province (No. BK20190602) and National Natural Science Foundation of China (21802054) and the Natural Science Foundation of Jiangsu Province (BK20180587).

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Authors and Affiliations

  1. International Joint Research Center for Photoresponsive Molecules and Materials, School of Chemical and Material Engineering, Jiangnan University, 1800 Lihu Road, Wuxi, 214122, People’s Republic of China

    Liyong Du, Keyan Wang, Yinpeng Zhong, Bing Liu & Yuqiang Ding

  2. Henan Key Laboratory of Function-Oriented Porous Materials, College of Chemistry and Chemical Engineering, Luoyang Normal University, Luoyang, 471934, People’s Republic of China

    Xinfang Liu

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  1. Liyong Du
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Du, L., Wang, K., Zhong, Y. et al. A high growth rate process of ALD CeOx with amidinato-cerium [(N-iPr-AMD)3Ce] and O3 as precursors. J Mater Sci 55, 5378–5389 (2020). https://doi.org/10.1007/s10853-020-04380-5

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