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Broadband infrared luminescence of Cr3+-doped LiInSiO4 phosphors

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Abstract

Cr3+-doped LiInSiO4 phosphors were prepared by a solid-state reaction method. X-ray diffraction measurement was carried out for crystalline phase identification. Absorption, photoluminescence, excitation, and time-resolved spectra were measured to investigate the optical properties of the phosphors. Two broadband near-infrared emissions centered at 920 and 1172 nm were observed. Time-resolved spectra show that the emission at 1172 nm decays more quickly than the emission at 920 nm. The electron spin resonance spectra exhibit a broad resonance signal at g = 1.96 because of exchange-coupled Cr3+ pairs. The value of Dq/B for low and intermediate crystal fields was evaluated. We suggest that Cr3+ incorporated into different octahedral sites of the crystal is responsible for the different near-infrared luminescence.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Yixi Zhuang, Jin Luo, Yu Teng, Song Ye, Bin Zhu & Jianrong Qiu

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  1. Yixi Zhuang
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  2. Jin Luo
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  3. Yu Teng
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  4. Song Ye
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  5. Bin Zhu
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  6. Jianrong Qiu
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Correspondence to Jianrong Qiu.

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Zhuang, Y., Luo, J., Teng, Y. et al. Broadband infrared luminescence of Cr3+-doped LiInSiO4 phosphors. Journal of Materials Research 25, 224–228 (2010). https://doi.org/10.1557/JMR.2010.0026

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