Abstract
A study comparing the morphology and electrical transport properties of pentacene films on underlayers of different self-assembled monolayers (SAMs) is presented. The SAMs studied as underlayers were phenyltrichlorosilane, n-octadecyltrichlorosilane, and t-butyldiphenylchlorosilane. Pentacene thin films were grown by vacuum sublimation on SiO2 surfaces treated with self-assembled monolayers. During deposition, substrates were held at a temperature of 70 °C. The morphologies of the films at different stages of deposition were studied by atomic force microscopy, and the transport properties of the films were characterized by I-V measurements in a simple field-effect transistor (FET) structure. The SAM underlayers strongly influence the film morphology in the first few molecular layers and hence significantly impact the electrical transport in the resulting FETs.
Similar content being viewed by others
References
H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and W. Radlik: High-mobility polymer gate dielectric pentacene thin film transistors. J. Appl. Phys. 92, 5259 (2002).
T.W. Kelley, D.V. Muyres, P.F. Baude, T.P. Smith, and T.D. Jones: High Performance Organic Thin Film Transistors, in Organic and Polymeric Materials and Devices, edited by P.W.M. Blom, N.C. Greenham, C.D. Dimitrakopoulos, and C.D. Frisbie (Mater. Res. Soc. Symp. Proc. 771, Warrendale, PA, 2003), p. 169, L6.5.
D.J. Gundlach, C.C. Kuo, S.F. Nelson, and T.N. Jackson: Organic Thin Film Transistors with Field Effect Mobility > 2 cm2/V-s. 57th Device Research Conference Digest, pp. 164–165, (1999).
M. Yoshida, S. Uemura, T. Kodsaza, T. Kamata, M. Matsuzawa, and T. Kawai: Surface Potential Control of an Insulator Layer for the High Performance Organic FET. Synth. Met. 137, 967–968 (2003).
D.J. Gundlach, C.C. Kuo, C.D. Sheraw, J.A. Nichols, and T.N. Jackson: Improved Organic Thin Film Transistor Performance Using Chemically-Modified Gate Dielectrics. Proceedings of the SPIE, vol. 4466, p. 54–64.
R. Ruiz, B. Nickel, N. Koch, L.C. Feldman, R.F. Haglund, A. Kahn, and G. Scoles: Pentacene ultrathin film formation on reduced and oxidized Si surfaces. Phys. Rev. B 67, 125406 (2003).
M. Shtein, J. Mapel, J.B. Bensiger, and S.R. Forrest: Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors. Appl. Phys. Lett. 81, 268 (2002).
F-J. Meyer zu Heringdorf, M.C. Reuter, and R.M. Tromp: Growth dynamics of pentacene thin films. Nature 412, 517 (2001).
L.L. Kosbar, C.D. Dimitrakopoulos, and D.J. Mascaro: The Effect of Surface Preparation on the Structure and Electrical Transport in an Organic Semiconductor, in Electronic, Optical and Optoelectronic Polymers and Oligomers, edited by G.E. Jabbour and N.S. Sariciftci (Mater. Res. Soc. Symp. Proc. 665, Warrendale, PA, 2002), p. 401, C10.6.1.
A. Salleo, M.L. Chabinyc, M.S. Yang, and R.A. Street: Polymer thin-film transistors with chemically modified dielectric interfaces. App. Phys. Lett. 81, 4383 (2002).
C.D. Dimitrakopoulos, A.R. Brown, and A. Pomp: Molecular Beam Deposited Thin Films of Pentacene for Organic Field Effect Transistor Applications. J. Appl. Phys. 80, 2501 (1996).
I.P.M. Bouchoms, W.A. Schoonveld, J. Vrijmoeth, and T.M. Klapwijk: Morphology identification of the thin film phases of vacuum evaporated pentacene on SiO2 substrates. Synth. Met. 104, 175 (1999).
D.J. Gundlach, Y.Y. Lin, T.N. Jackson, S.F. Nelson, and D.G. Schlom: Pentacene Organic Thin Film Transistors—Molecular Ordering and Mobility. IEEE Elect. Dev. Lett. 18, 87 (1997).
D. Knipp, R.A. Street, A. Völkel, and J. Ho: Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport. J. Appl. Phys. 93, 347 (2003).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Shankar, K., Jackson, T.N. Morphology and electrical transport in pentacene films on silylated oxide surfaces. Journal of Materials Research 19, 2003–2007 (2004). https://doi.org/10.1557/JMR.2004.0255
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.2004.0255