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Residual strain field in indented GaAs

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Abstract

This paper presents an optical mean to probe carefully the strain field generated by a microindentation on [111]-oriented GaAs sample, using micro-Raman spectroscopy and microphotoluminescence spectroscopy. Raman and photoluminescence signals recorded from the same point of the sample are directly compared. The frequency shift of the longitudinal and transverse optical phonons was analyzed in great detail, revealing unambiguously the presence of both compressive and tensile strains within the indented area. Outside the indentation fingerprint, the magnitude of strain deduced from luminescence measurements was found to be lower than the one determined by Raman scattering. The Raman spectra revealed significant variations of the optical phonons polarizability with the deformation. Finally, atomic force microscope images of the indented zone aid in the interpretation.

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Authors and Affiliations

  1. Laboratoire de Physique des Solides de Toulouse-IRSAMC-UMR 5477 CNRS, Université Paul Sabatier, 118 route de Narbonne, 31062, Toulouse, Cedex, France

    Pascal Puech & François Demangeot

  2. Departamento de Fisica, Universidade Federal de São Carlos, CP 369, 13560–970, São Carlos, SP, Brazil

    Paulo Sergio Pizani

  3. LPST—UMR 5477 CNRS, Université Paul Sabatier, 118 route de Narbonne, 31062, Toulouse, Cedex, France

    Samuel Wey

  4. LAAS—UPR 8001 CNRS, avenue du Colonel Roche, 31077, Toulouse, Cedex, France

    Chantal Fontaine

Authors
  1. Pascal Puech
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  2. François Demangeot
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  3. Paulo Sergio Pizani
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  4. Samuel Wey
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  5. Chantal Fontaine
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Puech, P., Demangeot, F., Pizani, P.S. et al. Residual strain field in indented GaAs. Journal of Materials Research 18, 1474–1480 (2003). https://doi.org/10.1557/JMR.2003.0203

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  • DOI: https://doi.org/10.1557/JMR.2003.0203

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