Abstract
The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.
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Gao, N.F., Miyamoto, Y. Joining of Ti3SiC2 with Ti–6Al–4V Alloy. Journal of Materials Research 17, 52–59 (2002). https://doi.org/10.1557/JMR.2002.0010
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DOI: https://doi.org/10.1557/JMR.2002.0010