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Impacts of postannealing ambient atmospheres on Pt/SrBi2.2Ta2O9/Pt capacitors

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Abstract

SrBi2Ta2O9 (SBT) films were prepared on Pt/TiO2/SiO2/Si substrates at 750 °C in oxygen by the metalorganic decomposition method. SBT film capacitors were postannealed in Ar (N2) at 350–750 °C and then reannealed in O2 at 750 °C. Effects of annealing atmosphere on the structure, morphology, and ferroelectric properties have been investigated systematically. The composition analyses indicate Ar- or N2-annealing at 750 °C leads to Bi evaporation and oxygen loss. Above 550 °C 100% Ar or N2 postannealing, the remnant polarization decreases and the coercive field increases significantly. The subsequent O2 recovery can hardly rejuvenate the electrical properties. The result is different from that with the effective O2 recovery in forming gas processing (annealing in an atmosphere containing 5% hydrogen). The possible origin and mechanism is discussed and proposed.

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Authors and Affiliations

  1. Materials Science and Engineering Department, Nanjing University, 210093, Nanjing, People’s Republic of China

    Ai-Dong Li, Hui-Qin Ling & Di Wu

  2. National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, People’s Republic of China

    Ai-Dong Li, Tao Yu, Hui-Qin Ling, Di Wu, Zhi-Guo Liu & Nai-Ben Ming

  3. Center for Advanced Studies in Science and Technology of Microstructures, Nanjing University, 210093, Nanjing, People’s Republic of China

    Zhi-Guo Liu & Nai-Ben Ming

Authors
  1. Ai-Dong Li
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  2. Tao Yu
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  3. Hui-Qin Ling
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  4. Di Wu
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  5. Zhi-Guo Liu
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  6. Nai-Ben Ming
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Li, AD., Yu, T., Ling, HQ. et al. Impacts of postannealing ambient atmospheres on Pt/SrBi2.2Ta2O9/Pt capacitors. Journal of Materials Research 16, 3526–3535 (2001). https://doi.org/10.1557/JMR.2001.0484

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  • DOI: https://doi.org/10.1557/JMR.2001.0484

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