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Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 °C

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Abstract

This paper reports on the role of boron in situ doping on enhancing crystallization of silicon germanium deposited at 400 °C and 2 torr. The dependence of growth rate on germanium content and boron concentration is investigated. The minimum boron concentration and the minimum germanium content required for crystallizing the as-grown layers is experimentally determined. The texture and grain microstructure of doped and undoped poly SiGe layers has been investigated by means of x-ray diffraction spectroscopy and transmission electron microscopy. The low deposition temperature coupled with the low tensile stress of the polycrystalline material enable postprocessing of surface micromachined microelectromechanical systems on top of standard complementry metal oxide semiconductor wafers with Al interconnects. Furthermore, the resistivity of the as-grown layers is as low as 1 mΩ cm, and hence, it can be used as a seeding layer for polycrystalline Si solar cells compatible with glass substrates.

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References

  1. T. Kamins, M. Mandurah, and K. Saraswat, J. Electrochem. Soc. 125, 927 (1978).

    Article  CAS  Google Scholar 

  2. S. Sedky, A. Witvrouw, H. Bender, and K. Baert, IEEE Trans. Electron Devices 48, 1 (2001).

    Article  Google Scholar 

  3. A.E. Franke, D. Bilic, D.T. Chang, P.T. Jones, T.J. King, R.T. Howe, and G.C. Johnson, Post-CMOS Integration of Germanium Microstructures, Twelfth IEEE International Conference on Micro Electro Mechanical Systems, MEMS ‘99, Orlando, FL, Jan. 17-21, 1999 (IEEE, Piscataway, NJ, 1999), pp. 630-637.

  4. T.J. King and K. Saraswat, IEEE Trans. Electron Devices 41, 1581 (1994).

    Article  CAS  Google Scholar 

  5. H.C. Lin, T.G. Jung, H.Y. Lin, and C.Y. Chang, Appl. Phys. Lett. 65, 1700 (1994).

    Article  CAS  Google Scholar 

  6. T.J. King, J.R. Pfiester, J.D. Short, J.P. McVittie, and K. Saraswat, IEDM Tech. Dig. 253 (1990).

  7. T.J. King and K.C. Saraswat, J. Electrochem. Soc. 141, 2235 (1994).

    Article  CAS  Google Scholar 

  8. T.J. King and K.C. Saraswat, IEDM Tech. Dig. 567 (1991).

  9. D.S. Bang, M. Cao, A. Wang, and K. Saraswat, Appl. Phys. Lett. 66, 195 (1995).

    Article  CAS  Google Scholar 

  10. T. Kamins and D. Meyer, Appl. Phys. Lett. 61, 90 (1992).

    Article  CAS  Google Scholar 

  11. P.M. Garone, J.C. Sturm, and P.V. Schwartz, Appl. Phys. Lett. 56, 1275 (1990).

    Article  CAS  Google Scholar 

  12. S. Sedky, A. Witvrouw, M. Caymax, A. Saerens, and P. Van Houtte, Effect of Deposition Conditions on the Structural and Mechanical Properties of Poly SiGe (Mater. Res. Soc. Symp. Proc. 609, War-rendale, PA, 2000), pp. A8.5.1-7.

    Google Scholar 

  13. S. Sedky, P. Fiorini, M. Caymax, S. Loreti, K. Baert, L. Hermans, and R. Mertens, J. Micromech. Microeng. 7, 365 (1998).

    CAS  Google Scholar 

  14. H.C. Lin, C.Y. Chang, W.C. Tsai, T.C. Chang, T.G. Jung, and H.Y. Lin, J. Electrochem. Soc. 141, 2559 (1994).

    Article  CAS  Google Scholar 

  15. V.Z. Li, M.R. Mirabedini, R.T. Kuehn, J.J. Wortman, M.C. Öztürk D. Batchelor, K. Christensen, and D.M. Maher, Appl. Phys. Lett. 71, 3388 (1997).

    Article  CAS  Google Scholar 

  16. H. Lin, T. Jung, H. Lin, C. Chang, T. Lei, P. Wang, R. Deng, J. Lin, and C. Chao, Appl. Phys. 74, 5395 (1993).

    Article  CAS  Google Scholar 

  17. P. Scafidi, J. Cali, and E. Bustarret, in Polycrystalline Thin Films: Structure, Texture, Properties, and Applications II, edited by H.J. Frost, MA. Parker, C.A. Ross, and E.A. Holm (Mater. Res. Soc. Symp. Proc. 403, Pittsburgh, PA, 1996), pp. 379-384.

  18. F. Edelman, T. Raz, Y. Komen, M. Stolzer, P. Werner, P. Zaumseil, H-J. Osten, J. Griesche, and M. Capitan, Thin Solid Films 337, 152 (1999).

    Article  Google Scholar 

  19. A.E. Franke, D. Bilic, D. Chang, P.T. Jones, T.J. King, R.T. Howe, and G.C. Johnson, in Proceedings of the 1999 International Conference on Solid-State Sensors and Actuators, Transducers ‘99, Sendai, Japan, 1999, pp. 530-533.

  20. A.E. Franke, Y. Jia, M.T. Wu, T.J. King, and R.T. Howe, Solid-State Sens. Actuator Workshop Techn. Dig. (June 2000), pp. 18-21.

  21. S. Sedky, P. Fiorini, K. Baert, L. Hermans, and R. Mertens, IEEE Trans. Electron Devices 46, 675 (1999).

    Article  CAS  Google Scholar 

  22. W. Geiger, B. Folkmer, U. Sobe, H. Sandmaier, and W. Lang, Int. Conf. Solid State Sens. Actuators 2, 1129 (1997).

    Article  Google Scholar 

  23. M.J. Vellekoop, GW. Lubking, P.M. Sarro, and A. Venema, Sens. Actuators, A A44, 249 (1994).

    Article  Google Scholar 

  24. H. Miura, H. Ohta, N. Okamoto, and T. Kaga, Appl. Phys. Lett. 60, 2746 (1992).

    Article  CAS  Google Scholar 

  25. M. Cao, A.W. Wang, and K.C. Saraswat, in Process Physics and Modeling in Semiconductor Technology, edited by G.R. Srinivasan, K. Taniguichi, and C.S. Murphy, PV 93-6 (The Electrochemical Society Proceedings Series PV 93-6, Pennington, NJ, 1993), pp. 350-356.

  26. T. Kamins, Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic, Dordrecht, The Netherlands, 1988), Chap. 2.

    Book  Google Scholar 

  27. S. Sedky, A. Witvrouw, and K. Baert, in The 11th International Conference on Solid State Sensors and Actuators, June 11-14, (Springer-Verlag, Munich, Germany, 2001), pp. 988-991.

  28. T.J. King and K.C. Saraswat, IEEE Electron Device Lett. 13, 309 (1992).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Engineering Physics, Faculty of Engineering, Cairo University, 12211, Giza, Egypt

    Sherif Sedky

  2. Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B3001, Leuven, Belgium

    Ann Witvrouw, Jef Poortmans & Kris Baert

  3. Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Leuven, Belgium

    Annelies Saerens & Paul Van Houtte

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  1. Sherif Sedky
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  2. Ann Witvrouw
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  3. Annelies Saerens
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  4. Paul Van Houtte
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Sedky, S., Witvrouw, A., Saerens, A. et al. Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 °C. Journal of Materials Research 16, 2607–2612 (2001). https://doi.org/10.1557/JMR.2001.0358

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  • DOI: https://doi.org/10.1557/JMR.2001.0358

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