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Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O3 thin-film capacitors with Pt- or Ir-based top electrodes

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Abstract

The degradation behavior of polarization and leakage current characteristics of sol-gel-derived (Pb,La)(Zr,Ti)O3 (PLZT) thin films, with Pt, Ir, and IrO2 top electrodes, by annealing under a 4% H2/96% N2 atmosphere were investigated. The leakage current behaviors of Pt/PLZT/Pt and IrO2/PLZT/Pt capacitors annealed at 300 °C for 20 min in 4% H2 were well consistent with the space-charge-influenced injection model proposed. However, IrO2/PLZT/Pt capacitors recovered at 700 °C for 10 min in Ar ambient after hydrogen anneal were not consistent with the proposed model because a conducting phase of IrPb was formed between the top electrode and PLZT during the recovery anneal at 700 °C in Ar ambient and modified the Schottky barrier height. The true leakage current behavior of IrO2/PLZT/Pt capacitors recovered after hydrogen forming are similar to those of Ir/PLZT/Pt capacitors without the hydrogen-forming gas anneal. The P–E loops of Pt/PLZT/Pt and Ir/PLZT/Pt capacitors showed good recovery through recovery anneal after H2 treatment. However, IrO2/PLZT/Pt capacitors depended on the recovery anneal atmosphere (Ar or O2).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, North Carolina, USA

    Soon-Gil Yoon

  2. Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764, Taejon, Korea

    Soon-Gil Yoon

  3. Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, North Carolina, USA

    Dwi Wicaksana, Dong-Joo Kim & A. I. Kingon

  4. Inostek Inc., 356-1 Gasan-Dong, 153-023, Keumcheon-Gu, Seoul, Korea

    Seung-Hyun Kim

Authors
  1. Soon-Gil Yoon
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  2. Dwi Wicaksana
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  3. Dong-Joo Kim
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  4. Seung-Hyun Kim
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  5. A. I. Kingon
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Yoon, SG., Wicaksana, D., Kim, DJ. et al. Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O3 thin-film capacitors with Pt- or Ir-based top electrodes. Journal of Materials Research 16, 1185–1189 (2001). https://doi.org/10.1557/JMR.2001.0163

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  • DOI: https://doi.org/10.1557/JMR.2001.0163

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