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Structural changes in GaAs induced by ultrafast (fs) laser pulses

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Abstract

Ultrafast changes in the crystal structure of GaAs induced by intense femtosecond laser pulses are detected and investigated. Atomic force microscopy and Raman microprobe analysis of the laser-treated area show centrosymmetric (disordered) features which are different from the original zinc-blend structure of the GaAs lattice. The frozen-in structure shows evidence for a special heat transfer from the laser-induced crater to the boundary, namely the heat has been transferred ballistically by a high-density electron-hole plasma.

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Authors and Affiliations

  1. Department of Experimental Physics, József Attila University, H-6720 Szeged, Dóm tér 9, Hungary

    L. Nánai, R. Vajtai & Cs. Beleznai

  2. Microelectronics and Materials Physics Laboratories, University of Oulu, SF-90570, Oulu, Finland

    J. Remes & S. Leppävuori

  3. Office of the Chancellor/Departments of Chemistry and Physics & Astronomy, University of Wisconsin–Stevens Point, Stevens Point, 54481-3897, Wisconsin, USA

    Thomas F. George

Authors
  1. L. Nánai
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  2. R. Vajtai
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  3. Cs. Beleznai
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  4. J. Remes
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  5. S. Leppävuori
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  6. Thomas F. George
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Nánai, L., Vajtai, R., Beleznai, C. et al. Structural changes in GaAs induced by ultrafast (fs) laser pulses. Journal of Materials Research 13, 1808–1811 (1998). https://doi.org/10.1557/JMR.1998.0255

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  • DOI: https://doi.org/10.1557/JMR.1998.0255

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