Abstract
Deep trapping levels in Bi12TiO20 obtained by top seeded solution growth and by the hydrothermal technique have been compared. This was undertaken as such levels directly influence the photorefractive behavior of the material. It is found that the most predominant of the peaks revealed by thermally stimulated conductivity measurements represents two rather than a single defect level and that the deeper of the two becomes more significant in hydrothermally grown material. One defect found in the solution pulled material is notably absent from that produced hydrothermally. The consequence of adding phosphorus doping and the manner in which it affects the deep levels has also been examined.
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References
L. Arizmendi, J. M. Cabrera, and F. Agullo-Lopez, Int. J. Optoelectronics 7, 149 (1992).
T. M. Bruton, J. C. Brice, O. F. Hill, and P. A. C. Whiffin, J. Cryst. Growth 23, 21 (1974).
J. J. Larkin, M. Harris, J. E. Cormier, and A. Armington, J. Cryst. Growth 128, 871 (1993).
D. E. Davies and J. J. Larkin, Appl. Phys. Lett. 67, 188 (1995).
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Davies, D.E., Harris, M.T. Trapping levels in hydrothermal and solution grown bismuth titanium oxide. Journal of Materials Research 12, 308–310 (1997). https://doi.org/10.1557/JMR.1997.0041
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DOI: https://doi.org/10.1557/JMR.1997.0041