Skip to main content
SpringerLink
Log in

Electron microscopic interfacial analysis of diamond film grown on silicon substrate

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

We have investigated the near-interface characterization of diamond films grown on Si(100) substrates by means of a hot-filament chemical-vapor-deposition (HFCVD) method using high-resolution-electron microscopy (HREM). Atomic scale study of the diamond/Si interface reveals that on the top of the amorphous intermediate layer, there exists a precursor phase which seems to be a diamond-like structure, which provides a suitable site for subsequent diamond nucleation. High density crystal defects directly originate from the precursor phase. HREM images also reveal that during the deposition Si recrystallizes in some damaged areas left by pretreatment, such as scratching grooves. In the recrystallization process twins and microtwins can be formed, and amorphous solid is left in the Si crystals.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Kobayashi, S. Karasawa, and T. Watanabe, J. Cryst. Growth 99, 1211 (1990).

    Article  CAS  Google Scholar 

  2. B. E. Williams and J. T. Glass, J. Mater. Res. 4, 373 (1989).

    Article  CAS  Google Scholar 

  3. C. P. Sung and H. C. Shih, J. Mater. Res. 7, 105 (1992).

    Article  CAS  Google Scholar 

  4. N. Jiang, B. W. Sun, Z. Zhang, and Z. Lin, J. Mater. Res. 9, 2702 (1994).

    Google Scholar 

  5. M. A. George, A. Burger, W. E. Collins, J.L. Davidson, A. V. Barnes, and N. H. Tolk, J. Appl. Phys. 76, 4099 (1994).

    Article  CAS  Google Scholar 

  6. J. Singh and M. Vellaikal, J. Appl. Phys. 73, 2883 (1993).

    Google Scholar 

  7. B. R. Stoner, G-H.M. Ma, S. D. Wottetr, and J. T. Glass, Phys. Rev. B 45, 11 067 (1992).

    Google Scholar 

  8. H. Kawarda, J.S. Ma, J. T. Suzuki, T. Ito, H. Mori, H. Fujita, and A. Hiraki, Jpn. J. Appl. Phys. 26, 1963 (1987).

    Google Scholar 

  9. A. Saeed, P.A. Gaskell, and D. A. Jefferson, Philos. Mag. B 66, 174 (1992).

    Google Scholar 

  10. J. C. Angus, M. Ssunkara, S. R. Sahaida, and J.T. Glass, J. Mater. Res. 7, 3001 (1992).

    Article  CAS  Google Scholar 

  11. N. Jiang, Z. Zhang, B. W. Sun, and D. Shi, Appl. Phys. Lett. 63, 329 (1993).

    Google Scholar 

  12. G-H. M. Ma, Y. H. Lee, and J. T. Glass, J. Mater. Res. 5, 2373 (1990).

    Article  Google Scholar 

  13. K. Minowa and K. Sumino, Phys. Rev. Lett. 69, 320 (1992).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical Engineering, Faculty of Engineering, Osaka University, Osaka, 565, Suita, Japan

    N. Jiang, A. Hatta, T. Ito, T. Sasaki & A. Hiraki

  2. Beijing Laboratory of Electron Microscopy, Chinese Academy of Science, 100080, Beijing, People’s Republic of China

    N. Jiang & Z. Zhang

Authors
  1. N. Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Hatta
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. Ito
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Z. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. T. Sasaki
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. Hiraki
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Jiang, N., Hatta, A., Ito, T. et al. Electron microscopic interfacial analysis of diamond film grown on silicon substrate. Journal of Materials Research 11, 1783–1786 (1996). https://doi.org/10.1557/JMR.1996.0223

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1996.0223

Search

Navigation