Abstract
We examine the formation of Si1-xCx (x = 0.04–0.2) by means of CFy (y = 0,1,3) implantation in p-type Si, for application as a wide-bandgap emitter in a Si heterojunc-tion bipolar transistor. Upon implantation with 2.5 × 1016 CF+/cm2 at 45 keV, and subsequently with 2.5 × 1016 C+/cm2 at 30 keV, an amorphous top layer is formed. Annealing at temperatures up to 900 °C leads to a layer consisting of nanocrystalline material. High resolution transmission electron microscopy and secondary ion mass spectrometry show that a well-defined nanocrystalline/crystalline interface is created at an anneal temperature of 550 °C. At higher temperatures lattice defects start to develop. Preliminary attempts to dope the material via phosphorus or arsenic implantation indicate that temperatures of at least 900 °C are required to activate a fraction of the implanted dopants. This, however, adversely affects the adlayer/substrate interface.
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Oostra, D.J., Politiek, J., Bulle-Lieuwma, C.W.T. et al. Can carbon-implanted silicon be applied as wide-bandgap emitter?. Journal of Materials Research 11, 1653–1658 (1996). https://doi.org/10.1557/JMR.1996.0207
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DOI: https://doi.org/10.1557/JMR.1996.0207