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Study of enhanced phosphorus activity in n-type Si80Ge20 as a function of the doping process

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Abstract

The electrical activity of phosphorus in Si80Ge20 alloys prepared by two nonconventional doping processes has been investigated over the temperature range 25–1250 °C. Both a solid state (mechanical alloying) and gaseous phase doping processes were found to extend the electrical activity of phosphorus in Si80Ge20 alloys beyond the reported maximum equilibrium value (2.1 × 1020/cm3) to 2.5–2.9 × 1020/cm3 within the temperature range 900 1200 °C. It is likely that this extended electrical activity of phosphorous is associated with a high density of defects. The enhanced electrical activity of phosphorus enabled Si80Ge20 alloys to have 300 to 1000 °C integrated average electrical power factors in the range 30.1–35.7 μW/cm-°C2.

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  1. Ames Laboratory, Iowa State University, Ames, Iowa, 50011-3020, USA

    S. H. Han & B. A. Cook

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  1. S. H. Han
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Han, S.H., Cook, B.A. Study of enhanced phosphorus activity in n-type Si80Ge20 as a function of the doping process. Journal of Materials Research 11, 55–62 (1996). https://doi.org/10.1557/JMR.1996.0008

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