Skip to main content
SpringerLink
Log in

Growth by molecular beam epitaxy of (rare-earth group V element)/III-V semiconductor heterostructures

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

This paper deals with the growth by molecular beam epitaxy of semimetallic (rare-earth group V element) compounds on III-V semiconductors. Results are presented, first on the Er-Ga-As and Er-Ga-Sb ternary phase diagrams, second on the lattice-mismatched ErAs/GaAs (δa ≈ +1.6%), YbAs/GaAs (δa/a = +0.8%), and ErSb/GaSb (δa/a ≈ +0.2%) heterostructures, and third on the lattice-matched Sc0.3Er0.7As/GaAs and Sc0.2Yb0.8As/GaAs systems (δa/a < 0.05%). Finally the growth of YbSb2 on GaSb(001) is reported. The studies made in situ by reflection high-energy electron diffraction (RHEED) and x-ray photoelectron diffraction and ex situ by x-ray diffraction, transmission electron microscopy, He+ Rutherford backscattering, and photoelectron spectroscopy are presented. We discuss the atomic registry of the epitaxial layers with respect to the substrates, the appearance of a mosaic effect in lattice-mismatched structures, and the optical and electrical properties of the semimetallic films. The problems encountered for III-V overgrowth on these compounds (lack of wetting and symmetry-related defects) are commented on, and we underline the interest of compounds as YbSb2 which avoid the appearance of inversion defects in the GaSb overlayers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T. Sands, C.J. Palmstrøm, J. P. Harbison, V.G. Keramidas, Ν. Tabatabaie, T.L. Cheeks, R. Ramesh, and Y. Silberberg, Mater. Sci. Rep. 5, 99 (1990).

    Article  CAS  Google Scholar 

  2. C.J. Palmsttøm and T. Sands, in Contacts to semiconductors, edited by L.J. Brillson (Noyes, Park Ridge, NJ, 1993), pp. 67-175.

  3. A. Guivarc’h, R. Guérin, and M. Secoué, Electron. Lett. 23, 1004 (1987).

    Article  Google Scholar 

  4. T. Sands, Appl. Phys. Lett. 52, 197 (1988).

    Article  CAS  Google Scholar 

  5. H.J. Richter, R. S. Smith, N. Herres, M. Seelmann-Eggebert, and P. Wenneker, Appl. Phys. Lett. 53, 99 (1988).

    Article  CAS  Google Scholar 

  6. J. Palmstrøm, N. Tabatabaie, and S.J. Allen, Jr., Appl. Phys. Lett. 53, 2608 (1988).

    Article  Google Scholar 

  7. M. Hong, H. S. Chen, J. Kwo, A. R. Kortan, J. P. Mannaerts, Β. Ε. Weir, and L.C. Feldman, J. Cryst. Growth 111, 984 (1991).

    Article  CAS  Google Scholar 

  8. Y. F. Hsieh, M. Hong, J. Kwo, A. R. Kortan, H. S. Chen, and J. P. Mannaerts, Inst. Phys. Conf. Ser. 120, 95 (1992).

    CAS  Google Scholar 

  9. A. Guivarc’h, J. Caulet, and A. Le Corre, Electron. Lett. 25, 1051 (1989).

    Google Scholar 

  10. S. Députier, R. Guérin, Y. Ballini, and A. Guivarc’h, J. Alloys Compounds 202, 95 (1993).

    Article  Google Scholar 

  11. M. C. Le Clanche, S. Députier, and R. Guérin (unpublished) M. C. Le Clanche, Thesis of the University of Rennes, n: 1411 (1995).

  12. Β. Lépine, A. Quémerais, D. Sébilleau, G. Jézéquel, D. Agliz, Y. Ballini, and A. Guivarc’h, J. Appl. Phys. 76, 5218 (1994).

    Article  Google Scholar 

  13. A. Guivarc’h, Y. Ballini, Y. Toudic, M. Minier, P. Auvray, B. Guenais, J. Caulet, B. Le Merdy, B. Lambert, and A. Regreny, J. Appl. Phys. 75, 2876 (1994).

    Article  Google Scholar 

  14. N.G. Stoffel, C.J. Palmstrom, and B.J. Wilkens, Nucl. Instrum. Methods B 56, 792 (1991).

    Article  Google Scholar 

  15. A. Guivarc’h, Y. Ballini, M. Minier, B. Guenais, G. Dupas, G. Ropars, and A. Regreny, J. Appl. Phys. 73, 8221 (1993).

    Article  Google Scholar 

  16. A. Le Corre, J. Caulet, and A. Guivarc’h, Appl. Phys. Lett. 55, 309 (1989).

    Article  Google Scholar 

  17. A. Le Corre, B. Guenais, A. Guivarc’h, D. Lecrosnier, J. Caulet, M. Minier, and G. Ropars, J. Cryst. Growth 105, 234 (1990).

    Article  Google Scholar 

  18. A. Guivarc’h, B. Guenais, Y. Ballini, P. Auvray, J. Caulet, M. Minier, G. Dupas, G. Ropars, and A. Regreny, J. Cryst. Growth 127, 638 (1993).

    Article  Google Scholar 

  19. B. Guenais, A. Poudoulec, A. Guivarc’h, Y. Ballini, V. Durel, and C. d’Anterroches, Inst. Phys. Conf. Ser. 134, 425 (1993).

    CAS  Google Scholar 

  20. D. Neveux, J. C. Simon, Y. Ballini, and A. Guivarc’h, Mater. Lett. 16, 251 (1993).

    Article  CAS  Google Scholar 

  21. A. Guivarc’h, Y. Ballini, P. Auvray, J. Caulet, M. Minier, G. Dupas, and G. Ropars, J. Appl. Phys. 74, 6632 (1993).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. FRANCE TELECOM, Centre National d’Etudes des Télécommunications, CNET/LAB, BP 40, F 22301, Lannion, France

    A. Guivarc’h, A. Le Corre, P. Auvray, B. Guenais, J. Caulet & Y. Ballini

  2. Laboratoire de Chimie du Solide et Inorganique Moléculaire, UA CNRS 1495, Campus de Beaulieu, F 35042, Rennes, France

    R. Gúcrin, S. Députier & M. C. Le Clanche

  3. Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042, Rennes, France

    G. Jézéquel, B. Lépine, A. Quémerais & D. Sébilleau

  4. Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042, Rennes, France

    A. Guivarc’h

Authors
  1. A. Guivarc’h
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Le Corre
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. P. Auvray
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. B. Guenais
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. Caulet
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Y. Ballini
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. R. Gúcrin
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. S. Députier
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. M. C. Le Clanche
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. G. Jézéquel
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. B. Lépine
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. A. Quémerais
    View author publications

    You can also search for this author in PubMed Google Scholar

  13. D. Sébilleau
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Guivarc’h, A., Le Corre, A., Auvray, P. et al. Growth by molecular beam epitaxy of (rare-earth group V element)/III-V semiconductor heterostructures. Journal of Materials Research 10, 1942–1952 (1995). https://doi.org/10.1557/JMR.1995.1942

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1995.1942

Search

Navigation